Transistors - RF power FET and GaAs-FET

Medium power GaAs-FET

Order code:	ATF-45101
	Medium power GaAs-FET Agilent Technologies ATF-45101
Type:	GaAs-FET
Drain-source voltage (Vds):	14 V
Gate-source voltage (Vgs):	-7 V
Drain current (Id):	600 mA
Gain:	10 dB
Output power:	29 dBm
Power dissipation:	3.6 W
Min. frequency:	2 GHz
Max. frequency:	8 GHz
Internally matched:	No
Package:	100 mil
Mounting:	flange

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Power GaAs-FET amplifier

Order code:	CLY-10
	Power GaAs-FET amplifier Infineon CLY 10
Type:	GaAs-FET
Drain-source voltage (Vds):	9 V
Gate-source voltage (Vgs):	-6 V
Drain current (Id):	2.1 A
Gain:	9 dB
Output power:	28.5 dBm
Power dissipation:	3.5 W
Max. frequency:	6 GHz
Internally matched:	No
Package:	SOT-223
Mounting:	SMD

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Power GaAs-FET amplifier

Order code:	CLY-2
	Power GaAs-FET amplifier Infineon CLY 2
Type:	GaAs-FET
Drain-source voltage (Vds):	9 V
Gate-source voltage (Vgs):	-6 V
Drain current (Id):	600 mA
Gain:	15.5 dB
Output power:	23.5 dBm
Power dissipation:	900 mW
Max. frequency:	6 GHz
Internally matched:	No
Package:	MW-6
Mounting:	SMD

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Internally matched power FET

Order code:	EIB1213-2P
	Internally matched power FET Excelics EIB1213-2P
Type:	FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	850 mA
Gain:	8.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	12.75 GHz
Max. frequency:	13.25 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting:	flange

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Internally matched power FET

Order code:	EIB1415-2P
	Internally matched power FET Excelics EIB1415-2P
Type:	FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	850 mA
Gain:	7.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	14.4 GHz
Max. frequency:	15.35 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting:	flange

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Power HJFET

Order code:	EPA240B-100P
	Power HJFET Excelics EPA240B-100P
Type:	HJFET
Drain-source voltage (Vds):	8 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	710 mA
Gain:	10.5 dB
Output power:	32.5 dBm
Power dissipation:	5.7 W
Max. frequency:	26 GHz
Internally matched:	No
Package:	100 mil
Mounting:	flange

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Power GaAs-FET

Order code:	FLC091WF
	Power GaAs-FET Fujitsu FLC091WF
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	300 mA
Gain:	8.5 dB
Output power:	28.8 dBm
Power dissipation:	4.16 W
Max. frequency:	12 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	flange

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Power GaAs-FET

Order code:	FLC161WF
	Power GaAs-FET Fujitsu FLC161WF
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	600 mA
Gain:	7.5 dB
Output power:	31.8 dBm
Power dissipation:	7.5 W
Max. frequency:	12 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	flange

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Medium-power GaAs-FET

Order code:	FLK012WF
	Medium-power GaAs-FET Fujitsu FLK012WF
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	60 mA
Gain:	7.5 dB
Output power:	20.5 dBm
Power dissipation:	1.15 W
Max. frequency:	16 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	flange

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Medium-power GaAs-FET

Order code:	FLK017WF
	Medium-power GaAs-FET Fujitsu FLK017WF
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	60 mA
Gain:	7.5 dB
Output power:	20.5 dBm
Power dissipation:	1.15 W
Max. frequency:	16 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	flange

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Power GaAs-FET

Order code:	FLL171ME
	Power GaAs-FET Fujitsu FLL171ME
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	600 mA
Gain:	12.5 dB
Output power:	32.5 dBm
Power dissipation:	7.5 W
Max. frequency:	5 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	flange

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Internally matched power GaAs-FET

Order code:	FLM0910-4F
	Internally matched power GaAs-FET Eudyna FLM0910-4F
RoHS compliant:	Yes
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	1.7 A
Gain:	7.5 dB
Output power:	36 dBm
Power dissipation:	25 W
Min. frequency:	9.3 GHz
Max. frequency:	10.7 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting:	flange

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Internally matched power GaAs-FET

Order code:	FLM7177-4D
	Internally matched power GaAs-FET Fujitsu FLM7177-4D
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	1.8 A
Gain:	8 dB
Output power:	36 dBm
Power dissipation:	25 W
Min. frequency:	7 GHz
Max. frequency:	7.9 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting:	flange

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Internally matched power GaAs-FET

Order code:	FLM7177-8D
	Internally matched power GaAs-FET Fujitsu FLM7177-8D
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	2.2 A
Gain:	7 dB
Output power:	39 dBm
Power dissipation:	42.8 W
Min. frequency:	6.9 GHz
Max. frequency:	7.9 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting:	flange

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Medium power GaAs-FET

Order code:	FLR014FH
	Medium power GaAs-FET Fujitsu FLR014FH
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	60 mA
Gain:	6.5 dB
Output power:	19.5 dBm
Power dissipation:	1 W
Max. frequency:	20 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting:	SMD

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