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Non-matched GaAs FETs
Non-matched GaAs FET are usually the most common because they are wide band and they can be used on different frequencies. They have a smaller package (compared with internally matched types) due to the fact that they have no internal matching networks.
For instance a 1.1W device characterized by the manufacturer up to 14.5 GHz (such as Mitsubishi MGF2430A) can be used from much lower frequencies up to 15 GHz because it has no pre-matching circuits; the devices is therefore meant to be wide band, typically used in X band but also from 2 - 3 GHz to 15 GHz.
From the other side there is a drawback in using these devices in wide band applications: we have to match them to the frequency we need because rarely they are already matched to 50Ω.
Internally matched GaAs FETs
These GaAs FETs are pre-matched with a matching network close to 50Ω inside the device, this is applicable for a moderate bandwidth, it means that into his own bandwidth the 50Ω matching is very easy. For their operation just a connection on a 50Ω track is needed, additional tunings are also possible (with the usual straw slid on the input and output tracks) but they will not lead to substantial improvements. Compared to all not matched types they have a larger
case that also serves to enclose the various matching networks.
Unlike the standard not matched types, they work only within their frequency band, with an over-range that depends a lot on power as when the devices have limited power, for example 1 or 2W, the internal matching and combining networks are rather simple and therefore fewer, so they can be used far beyond the optimal bandwidth, the classic example is the RFMA7185-S1 model, optimized for 7.1 - 8.5 GHz, that is usable also from 6 to 10 GHz and above.
For devices that have more power, 4W or more, matching and combining networks are more complicated and numerically more abundant so the frequency band is narrowed.
Codice d'ordine: | CLY-2 |
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Power GaAs-FET amplifier Siemens CLY 2 |
Condizioni: | N- (Il prodotto è nuovo ma proviene da una vecchia produzione) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 9 V |
Gate-source voltage (Vgs) : | -6 V |
Drain current (Id): | 600 mA |
Gain: | 15.5 dB |
Output power: | 23.5 dBm |
Power dissipation: | 900 mW |
Max. frequency : | 6 GHz |
Internally matched: | No |
Package: | MW-6 |
Mounting : | SMD |
Codice d'ordine: | EIB1213-2P |
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Internally matched power FET Excelics EIB1213-2P |
Condizioni: | N (Il prodotto è nuovo) |
Type: | FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 850 mA |
Gain: | 8.5 dB |
Output power: | 33 dBm |
Power dissipation: | 16 W |
Min. frequency: | 12.75 GHz |
Max. frequency : | 13.25 GHz |
Internally matched: | Si |
Package: | metal-ceramic |
Mounting : | flangia |
Codice d'ordine: | EIB1415-2P |
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Internally matched power FET Excelics EIB1415-2P |
Condizioni: | N (Il prodotto è nuovo) |
Type: | FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 850 mA |
Gain: | 7.5 dB |
Output power: | 33 dBm |
Power dissipation: | 16 W |
Min. frequency: | 14.4 GHz |
Max. frequency : | 15.35 GHz |
Internally matched: | Si |
Package: | metal-ceramic |
Mounting : | flangia |
Codice d'ordine: | FLC091WF |
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Power GaAs-FET Fujitsu FLC091WF |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 300 mA |
Gain: | 8.5 dB |
Output power: | 28.8 dBm |
Power dissipation: | 4.16 W |
Max. frequency : | 12 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLC161WF |
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Power GaAs-FET Fujitsu FLC161WF |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 600 mA |
Gain: | 7.5 dB |
Output power: | 31.8 dBm |
Power dissipation: | 7.5 W |
Max. frequency : | 12 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLK012WF |
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Medium-power GaAs-FET Fujitsu FLK012WF |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 60 mA |
Gain: | 7.5 dB |
Output power: | 20.5 dBm |
Power dissipation: | 1.15 W |
Max. frequency : | 16 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLK022WG |
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Ku-band medium power GaAs-FET Fujitsu FLK022WG |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 100 mA |
Gain: | 7 dB |
Output power: | 24 dBm |
Power dissipation: | 1.875 W |
Max. frequency : | 16 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLL171ME |
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Power GaAs-FET Fujitsu FLL171ME |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 600 mA |
Gain: | 12.5 dB |
Output power: | 32.5 dBm |
Power dissipation: | 7.5 W |
Max. frequency : | 5 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLM7177-4D |
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Internally matched power GaAs-FET Fujitsu FLM7177-4D |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 1.8 A |
Gain: | 8 dB |
Output power: | 36 dBm |
Power dissipation: | 25 W |
Min. frequency: | 7 GHz |
Max. frequency : | 7.9 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLM7177-8D |
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Internally matched power GaAs-FET Fujitsu FLM7177-8D |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 2.2 A |
Gain: | 7 dB |
Output power: | 39 dBm |
Power dissipation: | 42.8 W |
Min. frequency: | 6.9 GHz |
Max. frequency : | 7.9 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLR014FH |
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Medium power GaAs-FET Fujitsu FLR014FH |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 60 mA |
Gain: | 6.5 dB |
Output power: | 19.5 dBm |
Power dissipation: | 1 W |
Max. frequency : | 20 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | SMD |
Codice d'ordine: | FLR016FH |
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Medium power GaAs-FET Fujitsu FLR016FH |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 13 V |
Gate-source voltage (Vgs) : | -3 V |
Drain current (Id): | 70 mA |
Gain: | 8.5 dB |
Output power: | 20 dBm |
Power dissipation: | 1.15 W |
Max. frequency : | 20 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | SMD |
Codice d'ordine: | FLX102MB |
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Power GaAs-FET Fujitsu FLX102MB |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 400 mA |
Gain: | 7.5 dB |
Output power: | 30 dBm |
Power dissipation: | 7.5 W |
Max. frequency : | 14 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FLX102MH-12 |
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Power GaAs-FET Fujitsu FLX102MH-12 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 400 mA |
Gain: | 7.5 dB |
Output power: | 30 dBm |
Power dissipation: | 7.5 W |
Max. frequency : | 14 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FMC3485VA-03 |
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Internally matched power GaAs-FET Fujitsu FMC3485VA-03 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 10 V |
Drain current (Id): | 270 mA |
Gain: | 20 dB |
Output power: | 24 dBm |
Min. frequency: | 2.5 GHz |
Max. frequency : | 9.5 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FSX51WF |
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Medium-power GaAs-FET Fujitsu FSX51WF |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 12 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 60 mA |
Gain: | 9.5 dB |
Output power: | 19 dBm |
Power dissipation: | 1 W |
Max. frequency : | 15 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | FSX52WF |
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Medium-power GaAs-FET Fujitsu FSX52WF |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 12 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 150 mA |
Gain: | 10 dB |
Output power: | 23 dBm |
Power dissipation: | 1.5 W |
Max. frequency : | 15 GHz |
Internally matched: | No |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | KGF1323C |
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Power GaAs-FET amplifier OKI KGF1323C |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -6 V |
Drain current (Id): | 3 A |
Gain: | 9.5 dB |
Output power: | 33.4 dBm |
Power dissipation: | 5 W |
Max. frequency : | 3 GHz |
Internally matched: | No |
Package: | SOT-89 |
Mounting : | SMD |
Codice d'ordine: | LP1500P100 |
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Power AlGaAs-pHEMT Filtronic LP1500P100 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | AlGaAs-pHEMT |
Drain-source voltage (Vds): | 12 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 490 mA |
Gain: | 9 dB |
Output power: | 31 dBm |
Power dissipation: | 3 W |
Max. frequency : | 15 GHz |
Internally matched: | No |
Package: | ceramic |
Mounting : | flangia |
Codice d'ordine: | MGF1801B |
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Medium-power GaAs-FET MITSUBISHI MGF1801B |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 6 V |
Gate-source voltage (Vgs) : | -8 V |
Drain current (Id): | 250 mA |
Gain: | 9 dB |
Output power: | 23 dBm |
Power dissipation: | 1.2 W |
Max. frequency : | 12 GHz |
Internally matched: | No |
Package: | 100 mil |
Mounting : | SMD |
Codice d'ordine: | MGFC36V7177 |
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Internally matched power GaAs-FET MITSUBISHI MGFC36V7177 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -15 V |
Drain current (Id): | 2.8 A |
Gain: | 9 dB |
Output power: | 36 dBm |
Power dissipation: | 25 W |
Min. frequency: | 7.1 GHz |
Max. frequency : | 7.7 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | MGFC39V7177A |
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Internally matched power GaAs-FET MITSUBISHI MGFC39V7177A |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -15 V |
Drain current (Id): | 7.5 A |
Gain: | 8 dB |
Output power: | 39 dBm |
Power dissipation: | 42.8 W |
Min. frequency: | 7.1 GHz |
Max. frequency : | 7.7 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | MGFK35V2732 |
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Internally matched power GaAs-FET MITSUBISHI MGFK35V2732 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 10 V |
Gate-source voltage (Vgs) : | -15 V |
Drain current (Id): | 2.8 A |
Gain: | 7 dB |
Output power: | 35.5 dBm |
Power dissipation: | 27.2 W |
Min. frequency: | 12.7 GHz |
Max. frequency : | 13.2 GHz |
Internally matched: | Si |
Package: | metal-ceramic hermetic |
Mounting : | flangia |
Codice d'ordine: | MRFG35030R5 |
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Internally matched power GaAs-pHEMT Freescale Semiconductor MRFG35030R5 |
Condizioni: | N (Il prodotto è nuovo) |
Type: | AlGaAs-pHEMT |
Drain-source voltage (Vds): | 15 V |
Gate-source voltage (Vgs) : | -5 V |
Gain: | 12 dB |
Output power: | 44.8 dBm |
Power dissipation: | 79 W |
Min. frequency: | 3.4 GHz |
Max. frequency : | 3.6 GHz |
Internally matched: | Si |
Package: | metal-ceramic |
Mounting : | flangia |