MGFC39V7177A - Internally matched power GaAs-FET

MGFC39V7177A MITSUBISHI MGFC39V7177A Transistors - RF power FET and GaAs-FET
N- Datasheet
Available in stock
111 Units ready for shipment
 
Quantity
Minimum: 1 pcs
Multiple: 1 pcs
$80.13 /pcs
$80.13
Prices
Q.ty Price each Extended price
1+ $80.13 $80.13
Immediate availability
Dedicated technical support
Secure SSL payments
Fast shipping

Optimal frequency range 7.1 - 7.7 GHz, max. bandwidth 6.9 - 7.8 GHz, P1dB 8W typical, G1dB 8dB, VDS 10V

Suitable also for applications with digital modulations

 

Specifications

  • GaAs-FET
  • 10 V
  • -15 V
  • 7.5 A
  • 8 dB
  • 39 dBm
  • 42.8 W
  • 7.1 GHz
  • 7.7 GHz
  • Yes
  • metal-ceramic hermetic
  • flange
PDF · 905.4 kB
View

Compliance

  • JP
  • 85412900
  • 10.00 g
  • No
  • Not available