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Brand: MITSUBISHI
Manufacturer code: MGFC39V7177A
Order code: MGFC39V7177A

Internally matched power GaAs-FET

Product conditions: N
$133.02
/ pc
(VAT tax not included)
Minimum: 1 pc - Multiple: 1 pc
Stock
129 pcs ready to ship
Volume discounts
Quantity Unit Price You save
1+ $133.02 -
4+ $120.72 9%
10+ $109.54 18%
20+ $102.84 23%
40+ $98.37 26%
100+ $93.90 29%
(VAT tax not included)
Compliance
EU Tariff Code 85412900
RoHS No
REACH Not available
  • GaAs-FET
  • 10 V
  • -15 V
  • 7.5 A
  • 8 dB
  • 39 dBm
  • 42.8 W
  • 7.1 GHz
  • 7.7 GHz
  • Yes
  • metal-ceramic hermetic
  • flange

Internally matched power GaAs-FET

Internally matched power GaAs-FET, optimal frequency range 7.1 - 7.7 GHz, max. bandwidth 6.9 - 7.8 GHz, P1dB 8W typical, G1dB 8dB, VDS 10V

Suitable also for applications with digital modulations

MGFC39V7177A
/
Transistors - RF power FET and GaAs-FET
  Title Dimension  
Datasheet 905.4 kB
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