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Power GaAs FET, IDSS 300mA, P1dB 28.8dBm at 6 GHz, ceramic hermetic package with flange
- G1dB 9.5dB +31.8dBm @ 4 GHz- G1dB 8.5dB +31.8dBm @ 6 GHz- GLIN 10.5dB @ 4 GHz- GLIN 9.5dB @ 6 GHz