Transistors - RF FET and GaAs-FET

Low noise GaAs-FET

Order code:	ATF-10136
	Low noise GaAs-FET Agilent Technologies ATF-10136
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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General purpose low noise GaAs-FET

Order code:	ATF-10736
	General purpose low noise GaAs-FET Hewlett-Packard ATF-10736
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-13136
	Low noise GaAs-FET Hewlett-Packard ATF-13136
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9.5 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-13170
	Low noise GaAs-FET Hewlett-Packard ATF-13170
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	10 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-13284
	Low noise GaAs-FET Avantek ATF-13284
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	15 dB
Power dissipation:	225 mW
Max. frequency:	12 GHz
Package:	85 mil plastic
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13336
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13736
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13736
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-21170
	Low noise and high dynamic GaAs-FET Hewlett-Packard ATF-21170
Type:	GaAs-FET
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	120 mA
Associated gain (Ga):	13 dB
Power dissipation:	600 mW
Max. frequency:	6 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Generla purpose low noise GaAs-FET

Order code:	ATF-21186
	Generla purpose low noise GaAs-FET Agilent Technologies ATF-21186
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	120 mA
Associated gain (Ga):	12.6 dB
Power dissipation:	400 mW
Max. frequency:	6 GHz
Package:	85 mil plastic
Mounting:	SMD

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General purpose GaAs-FET

Order code:	ATF-26884
	General purpose GaAs-FET Hewlett-Packard ATF-26884
Type:	GaAs-FET
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	6 dB
Power dissipation:	275 mW
Max. frequency:	16 GHz
Package:	85 mil plastic
Mounting:	SMD

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High dynamic and low noise pHEMT

Order code:	ATF-33143
	High dynamic and low noise pHEMT Agilent Technologies ATF-33143
Type:	pHEMT
Drain-source voltage (Vds):	5.5 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	237 mA
Associated gain (Ga):	21 dB
Power dissipation:	600 mW
Max. frequency:	6 GHz
Package:	SOT-343
Mounting:	SMD

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Low noise pHEMT

Order code:	ATF-35076
	Low noise pHEMT Hewlett-Packard ATF-35076
Type:	pHEMT
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	50 mA
Associated gain (Ga):	11 dB
Power dissipation:	225 mW
Max. frequency:	18 GHz
Package:	70 mil ceramic
Mounting:	SMD

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High linearity E-pHEMT

Order code:	ATF-52189
	High linearity E-pHEMT Avago ATF-52189
Type:	E-pHEMT
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	500 mA
Associated gain (Ga):	16 dB
Power dissipation:	1.5 W
Max. frequency:	3 GHz
Package:	SOT-89
Mounting:	SMD

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Low noise E-pHEMT

Order code:	ATF-54143
	Low noise E-pHEMT Agilent Technologies ATF-54143
Type:	E-pHEMT
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	120 mA
Associated gain (Ga):	16.6 dB
Power dissipation:	360 mW
Max. frequency:	6 GHz
Package:	SOT-343
Mounting:	SMD

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Low noise E-pHEMT

Order code:	ATF-55143
	Low noise E-pHEMT Agilent Technologies ATF-55143
Type:	E-pHEMT
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	100 mA
Associated gain (Ga):	17.7 dB
Power dissipation:	270 mW
Max. frequency:	6 GHz
Package:	SOT-343
Mounting:	SMD

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