Low noise and high dynamic GaAs-FET

• Type:
  GaAs-FET
• Drain-source voltage (V_ds):
  5 V
• Gate-source voltage (V_gs):
  -4 V
• Drain current (I_d):
  50 mA
• Associated gain (G_a):
  9 dB
• Power dissipation:
  225 mW
• Max. frequency:
  16 GHz
• Package:
  micro-X
• Mounting:
  SMD

Low noise and high dynamic GaAs-FET

16 GHz high dynamic GaAs FET, I_DSS 40-90mA with 18dBm power output, micro-X ceramic package, good as second stage X amplifier, as mixer even in X band, as microwave oscillator and low power amplifier, FT 60GHz, similar to ATF-13736 but with better noise figure

- 1 dBNF 18 dBG @ 2 GHz
- 1 dBNF 17 dBG @ 4 GHz
- 1.4 dBNF 9 dBG @ 12 GHz