Low noise and high dynamic GaAs-FET

Name: Low noise and high dynamic GaAs-FET
Brand: Agilent Technologies
SKU: ATF-13336
Price: 2.9 EUR
Availability: InStock

Product conditions: N

$4.81

/ pc

(VAT tax not included)

Stock
659 pcs	ready to ship

Volume discounts
Quantity	Unit Price	You save
1+	$4.81	-
4+	$4.46	7%
10+	$4.12	14%
30+	$3.83	20%
100+	$3.55	26%
250+	$3.32	31%
(VAT tax not included)

Compliance
EU Tariff Code	85412900
Weight	1.00 g
RoHS	No
REACH	Not available

Type:
GaAs-FET
Drain-source voltage (V_ds):
5 V
Gate-source voltage (V_gs):
-4 V
Drain current (I_d):
50 mA
Associated gain (G_a):
9 dB
Power dissipation:
225 mW
Max. frequency:
16 GHz
Package:
micro-X
Mounting:
SMD

Low noise and high dynamic GaAs-FET

16 GHz high dynamic GaAs FET, I_DSS 40-90mA with 18dBm power output, micro-X ceramic package, good as second stage X amplifier, as mixer even in X band, as microwave oscillator and low power amplifier, FT 60GHz, similar to ATF-13736 but with better noise figure

- 1 dBNF 18 dBG @ 2 GHz
- 1 dBNF 17 dBG @ 4 GHz
- 1.4 dBNF 9 dBG @ 12 GHz

Order code: ATF-13336

Category: Transistors - RF FET and GaAs-FET

	Title	Dimension
	Datasheet	47.8 kB

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Low noise and high dynamic GaAs-FET

Low noise and high dynamic GaAs-FET

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