Transistors - RF FET and GaAs-FET

Dual gate low noise GaAs-MESFET

Order code:	CF-739
	Dual gate low noise GaAs-MESFET Siemens CF 739
Type:	GaAs-MESFET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs):	-6 V
Drain current (Id):	80 mA
Associated gain (Ga):	22 dB
Power dissipation:	240 mW
Max. frequency:	2 GHz
Package:	SOT-143
Mounting:	SMD

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General purpose dual gate GaAs-FET

Order code:	CF-750
	General purpose dual gate GaAs-FET Siemens CF 750
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	8 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	80 mA
Associated gain (Ga):	10 dB
Power dissipation:	300 mW
Max. frequency:	3 GHz
Package:	SOT-143
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	CFY-10
	Low noise and high dynamic GaAs-FET Siemens CFY 10
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	100 mA
Associated gain (Ga):	10 dB
Power dissipation:	500 mW
Max. frequency:	12 GHz
Package:	100 mil
Mounting:	SMD

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Low noise GaAs-FET

Order code:	EFA018A-70
	Low noise GaAs-FET Excelics EFA018A-70
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	6 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	40 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	240 mW
Max. frequency:	26 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise GaAs-FET

Order code:	EFA025A-70
	Low noise GaAs-FET Excelics EFA025A-70
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	6 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	52 mA
Associated gain (Ga):	10 dB
Power dissipation:	310 mW
Max. frequency:	26 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise high efficiency HFET

Order code:	EPA018A-70
	Low noise high efficiency HFET Excelics EPA018A-70
Conditions:	N (The product is brand new)
Type:	HFET
Drain-source voltage (Vds):	6 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	40 mA
Associated gain (Ga):	12.5 dB
Power dissipation:	240 mW
Max. frequency:	26 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise HEMT

Order code:	FHX35FH
	Low noise HEMT Fujitsu FHX35FH
Type:	HEMT
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	40 mA
Associated gain (Ga):	10 dB
Power dissipation:	290 mW
Max. frequency:	18 GHz
Package:	FH (ceramic HI-REL)
Mounting:	SMD

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2 - 12 GHz GaAs-FET oscillator

Order code:	HFET-1102
	2 - 12 GHz GaAs-FET oscillator Hewlett-Packard HFET-1102
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs):	-5 V
Drain current (Id):	120 mA
Associated gain (Ga):	16 dB
Max. frequency:	12 GHz
Package:	HPAC-100A (100 mil)
Mounting:	SMD

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GaAs FET small-signal amplifier

Order code:	KGF1522
	GaAs FET small-signal amplifier OKI KGF1522
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	50 mA
Power dissipation:	200 mW
Max. frequency:	2 GHz
Package:	4PSOP
Mounting:	SMD

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Low noise InGaAs-HEMT

Order code:	MGF4714CP
	Low noise InGaAs-HEMT MITSUBISHI MGF4714CP
Conditions:	N (The product is brand new)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-22 (86 mil) plastic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4914D
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4914D
Conditions:	N (The product is brand new)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4917D
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4917D
Conditions:	N (The product is brand new)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11.5 dB
Power dissipation:	50 mW
Max. frequency:	20 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4918E
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4918E
Conditions:	N (The product is brand new)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11.5 dB
Power dissipation:	50 mW
Max. frequency:	20 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4919G
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4919G
Conditions:	N (The product is brand new)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	13.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Low noise GaAs-HEMT

Order code:	MGF4953B
	Low noise GaAs-HEMT MITSUBISHI MGF4953B-70
Conditions:	N (The product is brand new)
Type:	GaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs):	-3 V
Drain current (Id):	60 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	50 mW
Max. frequency:	26 GHz
Package:	ceramic chip
Mounting:	SMD

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