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Maybe not all know that the first GaAs FET was born in California in 1965 while the first commercial products were available in 1967 made by Fairchild. It was then the turn of HP in 1972 and Fujitsu in 1973 to greatly improve performance for applications that really concerned the microwave.
The first HEMT saw the light in 1985 by the Californian Gould.
ADVICE ON LOW NOISE GA-AS-FETs CHOICE
Some manufacturers provide their devices both with long leads (sold individually in small amounts) and with short leads usually in tape reels of 1000 pcs. The only difference is that the models with the short leads, on tape, are used in pick and place machines for SMD components placing in large volumes so they have a lower price. In the selection is a good thing to examine this fact and take advantage of a more attractive price. Eg: MGF 1303 long leads = MGF1903 short leads, even for models MGF 43 ... with long leads = MGF 49 ... with short leads.
GaAs FET = Gallium Arsenide FET
HEMT = High Electron Mobility Transistor
PHEMT = Pseudomorphic HEMT
E-PHEMT = Enhanced PHEMT
Order code: | ATF-10136 |
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Low noise GaAs-FET Agilent Technologies ATF-10136-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 130 mA |
Associated gain (Ga): | 13 dB |
Power dissipation: | 430 mW |
Max. frequency: | 6 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-10736 |
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General purpose low noise GaAs-FET Hewlett-Packard ATF-10736-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 130 mA |
Associated gain (Ga): | 13 dB |
Power dissipation: | 430 mW |
Max. frequency: | 6 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-13136 |
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Low noise GaAs-FET Hewlett-Packard ATF-13136-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 9.5 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-13170 |
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Low noise GaAs-FET Hewlett-Packard ATF-13170 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 10 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | 70 mil ceramic |
Mounting: | SMD |
Order code: | ATF-13336 |
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Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 9 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-13736 |
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Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13736-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 9 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-21186 |
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Generla purpose low noise GaAs-FET Agilent Technologies ATF-21186-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 120 mA |
Associated gain (Ga): | 12.6 dB |
Power dissipation: | 400 mW |
Max. frequency: | 6 GHz |
Package: | 85 mil plastic |
Mounting: | SMD |
Order code: | ATF-26884 |
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General purpose GaAs-FET Agilent Technologies ATF-26884-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 7 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 6 dB |
Power dissipation: | 275 mW |
Max. frequency: | 16 GHz |
Package: | 85 mil plastic |
Mounting: | SMD |
Order code: | ATF-35076 |
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Low noise pHEMT Hewlett-Packard ATF-35076-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | pHEMT |
Drain-source voltage (Vds): | 4 V |
Gate-source voltage (Vgs) : | -3 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 11 dB |
Power dissipation: | 225 mW |
Max. frequency: | 18 GHz |
Package: | 70 mil ceramic |
Mounting: | SMD |
Order code: | ATF-54143 |
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Low noise E-pHEMT Agilent Technologies ATF-54143-TR1G |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | E-pHEMT |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 120 mA |
Associated gain (Ga): | 16.6 dB |
Power dissipation: | 360 mW |
Max. frequency: | 6 GHz |
Package: | SOT-343 |
Mounting: | SMD |
Order code: | CF-750 |
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General purpose dual gate GaAs-FET Siemens CF 750 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 8 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 80 mA |
Associated gain (Ga): | 10 dB |
Power dissipation: | 300 mW |
Max. frequency: | 3 GHz |
Package: | SOT-143 |
Mounting: | SMD |
Order code: | CFY-10 |
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Low noise and high dynamic GaAs-FET Siemens CFY 10 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -5 V |
Drain current (Id): | 100 mA |
Associated gain (Ga): | 10 dB |
Power dissipation: | 500 mW |
Max. frequency: | 12 GHz |
Package: | 100 mil |
Mounting: | SMD |
Order code: | EFA025A-70 |
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Low noise GaAs-FET Excelics EFA025A-70 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 6 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 52 mA |
Associated gain (Ga): | 10 dB |
Power dissipation: | 310 mW |
Max. frequency: | 26 GHz |
Package: | 70 mil ceramic |
Mounting: | SMD |
Order code: | KGF1522 |
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GaAs FET small-signal amplifier OKI KGF1522 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 4 V |
Gate-source voltage (Vgs) : | -3 V |
Drain current (Id): | 50 mA |
Power dissipation: | 200 mW |
Max. frequency: | 2 GHz |
Package: | 4PSOP |
Mounting: | SMD |
Order code: | MGF4714CP |
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Low noise InGaAs-HEMT MITSUBISHI MGF4714CP |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | InGaAs-HEMT |
Drain-source voltage (Vds): | 2 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 60 mA |
Associated gain (Ga): | 11 dB |
Power dissipation: | 50 mW |
Max. frequency: | 18 GHz |
Package: | GD-22 (86 mil) plastic |
Mounting: | SMD |
Order code: | MGF4914D |
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Ultra low noise InGaAs-HEMT MITSUBISHI MGF4914D |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | InGaAs-HEMT |
Drain-source voltage (Vds): | 2 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 60 mA |
Associated gain (Ga): | 11.5 dB |
Power dissipation: | 50 mW |
Max. frequency: | 18 GHz |
Package: | GD-16 (70 mil) ceramic |
Mounting: | SMD |
Order code: | MGF4919G |
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Ultra low noise InGaAs-HEMT MITSUBISHI MGF4919G |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | InGaAs-HEMT |
Drain-source voltage (Vds): | 2 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 60 mA |
Associated gain (Ga): | 13.5 dB |
Power dissipation: | 50 mW |
Max. frequency: | 18 GHz |
Package: | GD-16 (70 mil) ceramic |
Mounting: | SMD |
Order code: | MGF4953B |
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Low noise GaAs-HEMT MITSUBISHI MGF4953B-70 |
Conditions: | N (The product is brand new) |
Type: | GaAs-HEMT |
Drain-source voltage (Vds): | 2 V |
Gate-source voltage (Vgs) : | -3 V |
Drain current (Id): | 60 mA |
Associated gain (Ga): | 10.5 dB |
Power dissipation: | 50 mW |
Max. frequency: | 26 GHz |
Package: | ceramic chip |
Mounting: | SMD |