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Brand: MITSUBISHI
Manufacturer code: MGF4919G
Order code: MGF4919G

Ultra low noise InGaAs-HEMT

Product conditions: N-
$5.01
/ pc
(VAT tax not included)
Minimum: 1 pc - Multiple: 1 pc
Availability
Stock
(immediate dispatch)		 926 pcs
Volume discounts
Quantity Unit Price You save
1+ $5.01 -
5+ $4.60 8%
10+ $4.24 15%
50+ $3.98 20%
100+ $3.51 30%
250+ $3.35 33%
(VAT tax not included)
Compliance
Country of origin JP
EU Tariff Code 85412900
Weight 0.20 g
RoHS No
REACH Not available
  • InGaAs-HEMT
  • 2 V
  • -4 V
  • 60 mA
  • 13.5 dB
  • 50 mW
  • 18 GHz
  • GD-16 (70 mil) ceramic
  • SMD

Ultra low noise InGaAs-HEMT

Ultra low noise InGaAs-HEMT amplifier with very low NF, IDSS 15-60mA with VDS 2V, 70 mil ceramic package

- 0.6 dBNF 12 dBG @ 10 GHz
- 0.4 dBNF 15 dBG @ 14 GHz
- 0.24 dBNF 21.6 dBG @ 18 GHz

- P1dB +15 dBm @ 10 GHz

(Note: MGF4919G short leads tape reel = MGF4319G long leads)

MGF4919G
/
Transistors - RF FET and GaAs-FET
  Title Dimension  
Datasheet 20.3 kB
avatar
Eastline
03/03/2015

important! DC 13+ only

avatar
f6tem
22/01/2015

one of the best for L band LNA. look at EME and RW3BP report. 73's

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