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Brand: MITSUBISHI
Manufacturer code: MGF4914D
Order code: MGF4914D

Ultra low noise InGaAs-HEMT

Product conditions: N
$5.70
/ pc
(VAT tax not included)
Minimum: 1 pc - Multiple: 1 pc
Availability
Stock
(immediate dispatch)		 296 pcs
Volume discounts
Q.ty Unit Price Ext. price
1+ $5.70 $5.70
4+ $5.32 $21.30
10+ $5.06 $50.56
30+ $4.79 $143.61
100+ $4.57 $457.17
(VAT tax not included)
Compliance
Country of origin JP
EU Tariff Code 85412900
Weight 1.00 g
RoHS No
REACH Not available
  • InGaAs-HEMT
  • 2 V
  • -4 V
  • 60 mA
  • 11.5 dB
  • 50 mW
  • 18 GHz
  • GD-16 (70 mil) ceramic
  • SMD

Ultra low noise InGaAs-HEMT

Ultra low noise InGaAs-HEMT amplifier up to 18 GHz, IDSS 20mA with VDS 2V, 70 mil ceramic package with short leads

- 0,35 dBNF 20 dBG @ 1 GHz
- 0,41 dBG 16.5 dBG @ 4 GHz
- 0.9 dBNF 11.5 dBG @ 12 GHz
- 1.3 dBNF 7.4 dBG @ 18 GHz

(Note: MGF4914D short leads tape reel = MGF4314D long leads)

MGF4914D
/
Transistors - RF FET and GaAs-FET
  Title Dimension  
Datasheet 583.8 kB
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