N-channel enhancement-mode RF power FET, 28V, 20W, 4A

• Polarity:
  N-channel
• Output power:
  20 W
• Dissipated power (Ptot):
  70 W
• Drain current (Id max):
  4 A
• Drain-source voltage (Vds max):
  65 V
• Supply voltage:
  28 V
• Mounting or package:
  flange
• Frequency bands:
  UHF
  VHF

N-channel enhancement-mode RF power FET, 28V, 20W, 4A

N-channel enhancement-mode RF power FET

SPECIFICATIONS:

• Input voltage: 28V
• Gate-Source voltage: ±40V
• Drain-Gate voltage: 65V
• Drain current: 4A
• Total power dissipation: 70W
• Power output: 25W 17dBG @ 400 MHz (input 0.6W)
• Power output: 20W 14dBG @ 500 MHz (input 0.7W)

For wide band, 30 - 500 MHz, applications and high gain