Transistors - RF power FET and GaAs-FET

Medium power GaAs-FET

Order code:	FLR016FH
	Medium power GaAs-FET Fujitsu FLR016FH
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	13 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	70 mA
Gain:	8.5 dB
Output power:	20 dBm
Power dissipation:	1.15 W
Max. frequency :	20 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	SMD

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Power GaAs-FET

Order code:	FLU10XM
	Power GaAs-FET Fujitsu FLU10XM
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	300 mA
Gain:	14.5 dB
Output power:	29.5 dBm
Power dissipation:	4.16 W
Max. frequency :	5 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	SMD

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Power GaAs-FET

Order code:	FLX102MB
	Power GaAs-FET Fujitsu FLX102MB
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	400 mA
Gain:	7.5 dB
Output power:	30 dBm
Power dissipation:	7.5 W
Max. frequency :	14 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	flange

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Power GaAs-FET

Order code:	FLX102MH-12
	Power GaAs-FET Fujitsu FLX102MH-12
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	400 mA
Gain:	7.5 dB
Output power:	30 dBm
Power dissipation:	7.5 W
Max. frequency :	14 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	FMC3485VA-03
	Internally matched power GaAs-FET Fujitsu FMC3485VA-03
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Drain current (Id):	270 mA
Gain:	20 dB
Output power:	24 dBm
Min. frequency:	2.5 GHz
Max. frequency :	9.5 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

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Medium-power GaAs-FET

Order code:	FSX51WF
	Medium-power GaAs-FET Fujitsu FSX51WF
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	12 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	60 mA
Gain:	9.5 dB
Output power:	19 dBm
Power dissipation:	1 W
Max. frequency :	15 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	flange

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Medium-power GaAs-FET

Order code:	FSX52WF
	Medium-power GaAs-FET Fujitsu FSX52WF
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	12 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	150 mA
Gain:	10 dB
Output power:	23 dBm
Power dissipation:	1.5 W
Max. frequency :	15 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	flange

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Power GaAs-FET amplifier

Order code:	KGF1323C
	Power GaAs-FET amplifier OKI KGF1323C
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-6 V
Drain current (Id):	3 A
Gain:	9.5 dB
Output power:	33.4 dBm
Power dissipation:	5 W
Max. frequency :	3 GHz
Internally matched:	No
Package:	SOT-89
Mounting :	SMD

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Power AlGaAs-pHEMT

Order code:	LP1500P100
	Power AlGaAs-pHEMT Filtronic LP1500P100
Conditions:	N (The product is brand new)
Type:	AlGaAs-pHEMT
Drain-source voltage (Vds):	12 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	490 A
Gain:	9 dB
Output power:	31 dBm
Power dissipation:	3 W
Max. frequency :	15 GHz
Internally matched:	No
Package:	ceramic
Mounting :	flange

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Power-GaAs FET

Order code:	MGF0904A
	Power-GaAs FET MITSUBISHI MGF0904A-01
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	8 V
Gate-source voltage (Vgs) :	-17 V
Drain current (Id):	800 mA
Gain:	13 dB
Output power:	28 dBm
Power dissipation:	3.75 W
Max. frequency :	3 GHz
Internally matched:	No
Package:	ceramic
Mounting :	flange

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Medium-power GaAs-FET

Order code:	MGF1801B
	Medium-power GaAs-FET MITSUBISHI MGF1801B
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	6 V
Gate-source voltage (Vgs) :	-8 V
Drain current (Id):	250 mA
Gain:	9 dB
Output power:	23 dBm
Power dissipation:	1.2 W
Max. frequency :	12 GHz
Internally matched:	No
Package:	100 mil
Mounting :	SMD

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Internally matched power GaAs-FET

Order code:	MGFC36V7177
	Internally matched power GaAs-FET MITSUBISHI MGFC36V7177
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	2.8 A
Gain:	9 dB
Output power:	36 dBm
Power dissipation:	25 W
Min. frequency:	7.1 GHz
Max. frequency :	7.7 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	MGFC39V7177A
	Internally matched power GaAs-FET MITSUBISHI MGFC39V7177A
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	7.5 A
Gain:	8 dB
Output power:	39 dBm
Power dissipation:	42.8 W
Min. frequency:	7.1 GHz
Max. frequency :	7.7 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	MGFK35V2732
	Internally matched power GaAs-FET MITSUBISHI MGFK35V2732
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	2.8 A
Gain:	7 dB
Output power:	35.5 dBm
Power dissipation:	27.2 W
Min. frequency:	12.7 GHz
Max. frequency :	13.2 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-pHEMT

Order code:	MRFG35030R5
	Internally matched power GaAs-pHEMT Freescale Semiconductor MRFG35030R5
Conditions:	N (The product is brand new)
Type:	AlGaAs-pHEMT
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Gain:	12 dB
Output power:	44.8 dBm
Power dissipation:	79 W
Min. frequency:	3.4 GHz
Max. frequency :	3.6 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange

Go to product page MRFG35030R5