BFW30 - Silicon bipolar NPN RF transistor, TO-72

Silicon bipolar NPN RF transistor

SPECIFICATIONS:

• Transition frequency (f_T): 1.6 GHz
• Collector current (I_C): 50mA
• Power gain: 21dB @ 200 MHz
• Noise figure: 2.1dB @ 200 MHz
• Total power dissipation: 250mW
• Package: TO-72 metallic

This transistor was designed for professional purposes as wide band amplifier and for instrumentations, but also for high dynamic TV amplification.

For general purpose applications up to 1 GHz thanks to the metallic package and HF and VHF high gain

CLASS A:

• Frequency Bands: I, II, III, IV, V
• Class A output level: 100mV, I_C 30mA