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BFW30 Siemens

Order code: BFW30
BFW30
Transistors - BJT

Silicon bipolar NPN RF transistor, TO-72

Product conditions: N-     
  • NPN
  • 10 V
  • 1.6 GHz
  • 50 mA
  • 250 mW
  • thru-hole
  • TO-72
  • metallic
  Title Dimension  
BFW30 - Datasheet 64.4 kB

Silicon bipolar NPN RF transistor

SPECIFICATIONS:

  • Transition frequency (fT): 1.6 GHz
  • Collector current (IC): 50mA
  • Power gain: 21dB @ 200 MHz
  • Noise figure: 2.1dB @ 200 MHz
  • Total power dissipation: 250mW
  • Package: TO-72 metallic

This transistor was designed for professional purposes as wide band amplifier and for instrumentations, but also for high dynamic TV amplification.

For general purpose applications up to 1 GHz thanks to the metallic package and HF and VHF high gain

CLASS A:

  • Frequency Bands: I, II, III, IV, V
  • Class A output level: 100mV, IC 30mA
  • 0.40 g
  • No
  • Not available
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