RF power LD MOSFET, 26V, 12W
This power FET is available for use in the 400 MHz - 2.4 GHz band at a very affordable price. Due to the remarkable development of 1.9 GHz band base stations for cellular and other wireless infrastructure, now are available devices with a professional ceramic case at costs so far unthinkable. This FET for medium power applications up to 2.4 GHz is currently the best compromise between cost and quality. Of course you can also use them starting form 100 MHz but we believe more convenient an usage over 400 MHz, in fact the device is not pre-matched and so it can work very well on broadband circuits.
WARNING: due to the high gain and low frequencies we suggest (like for all wide band devices) to limit gain for lower frequencies. In fact the circuit below is not the best obtainable in performances for PTF10041 at 1.3 GHz but it is very stable because it has not self-oscillations and it gives a weaker amplification at lower frequencies.
|PTF10041 test at 1.3 GHz|
It is preferable to get the bias circuit from a common voltage stabilizer,
the bias voltage on the gate is about +4.5/+5V
C1 = 6p8
|VCC = 12.6V|
|Bias 150 mA : 2.8 W @ 0.6 A 10.5 dBGlin --- Bias 300 mA : 3.4 W @ 0.7 A 12.8 dBGlin
Bias 500 mA : 4 W @ 0.8 A 13.5 dBGlin --- V bias ~ + 5V --- B-1dB = ~ 100 MHz