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Order code: | ATF-13336 |
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Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 9 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-13170 |
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Low noise GaAs-FET Hewlett-Packard ATF-13170 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 10 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | 70 mil ceramic |
Mounting: | SMD |
Order code: | AM50-0004 |
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GaAs MMIC amplifier, SOIC-8 M/A-COM AM50-0004 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Min. frequency: | 1400 MHz |
Max. frequency: | 2000 MHz |
Operating voltage: | 3 V |
Operating current: | 20 mA |
Gain (max.): | 12.5 dB |
Output power (max.): | 9 dBm |
Noise figure (min.): | 1.5 dB |
Package: | SOIC-8 |
Mounting: | SMD |
Order code: | AMP-10G3 |
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Amplifier, 10.1 - 10.6 GHz, 200mW, SMA female Fresnel C00566 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Min. frequency : | 10.1 GHz |
Max. frequency: | 10.6 GHz |
Gain: | 6 dB |
Power output (P1dB): | 23 dBm |
Supply voltage min. or nominal: | 10 V |
Type : | connector |
Connectors : | SMA female |
Order code: | AM50-0003 |
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GaAs MMIC amplifier, SOIC-8 M/A-COM AM50-0003 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Min. frequency: | 800 MHz |
Max. frequency: | 1000 MHz |
Operating voltage: | 5 V |
Operating current: | 20 mA |
Gain (max.): | 13.5 dB |
Output power (max.): | 16.5 dBm |
Noise figure (min.): | 1.2 dB |
Package: | SOIC-8 |
Mounting: | SMD |
Order code: | ALM-05 |
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White alumina substrate board, 50.8 x 50.8, thk. 0.63mm |
Conditions: | N (The product is brand new) |
Laminate type: | white alumina |
Dielectric constant (εr): | 9.90 |
Dielectric thikness: | 0.630 mm (0.025 in) |
Copper cladding type: | without copper |
Dissipation factor (tan δ): | 0.0002 @ 10 GHz |
Board size (metric): | 50.8 x 50.8 mm |
Board size (inch) : | 2 x 2 in |
Order code: | ALM-03 |
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White alumina substrate board, 25.4 x 50.8mm, th. 0.254mm |
Conditions: | N (The product is brand new) |
Laminate type: | white alumina |
Dielectric constant (εr): | 9.90 |
Dielectric thikness: | 0.254 mm (0.010 in) |
Copper cladding type: | without copper |
Dissipation factor (tan δ): | 0.0002 @ 10 GHz |
Board size (metric): | 25.4 x 50.8 mm |
Board size (inch) : | 1 x 2 in |
Order code: | ALM-04 |
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White alumina substrate board, 25.4 x 50.8mm, thk. 0.63mm |
Conditions: | N (The product is brand new) |
Laminate type: | white alumina |
Dielectric constant (εr): | 9.90 |
Dielectric thikness: | 0.630 mm (0.025 in) |
Copper cladding type: | without copper |
Dissipation factor (tan δ): | 0.0002 @ 10 GHz |
Board size (metric): | 25.4 x 50.8 mm |
Board size (inch) : | 1 x 2 in |
Order code: | ANT-001 |
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Grid Parabolic Antenna, 2.3 - 2.5 GHz, 24 dBi KBT TDJ-2400A |
Conditions: | N (The product is brand new) |
Frequency min.: | 2.3 GHz |
Frequency max.: | 2.5 GHz |
Gain: | 24 dBi |
Connector: | N female |
Antenna type: | outdoor |
Impedance: | 50 Ohm |
Order code: | AQ13-1N-K150 |
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Porcelain multilayer SMD capacitor AVX AQ13EM102KA7ME |
Conditions: | N- (The product is brand new but it comes from an old production) |
Series: | AQ13 |
Capacitance: | 1 nF |
Tolerance (code): | K |
Tolerance (value) (±): | 10% |
Max. working voltage: | 150 V |
Tcc (ppm/ºC): | 90 ±20 (P90) |
Dielectric material: | porcelain |
Package type : | B (1111) |
Order code: | ATF-10736 |
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General purpose low noise GaAs-FET Hewlett-Packard ATF-10736-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 130 mA |
Associated gain (Ga): | 13 dB |
Power dissipation: | 430 mW |
Max. frequency: | 6 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-13136 |
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Low noise GaAs-FET Hewlett-Packard ATF-13136-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 50 mA |
Associated gain (Ga): | 9.5 dB |
Power dissipation: | 225 mW |
Max. frequency: | 16 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | ATF-10136 |
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Low noise GaAs-FET Agilent Technologies ATF-10136-TR1 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Type: | GaAs-FET |
Drain-source voltage (Vds): | 5 V |
Gate-source voltage (Vgs) : | -4 V |
Drain current (Id): | 130 mA |
Associated gain (Ga): | 13 dB |
Power dissipation: | 430 mW |
Max. frequency: | 6 GHz |
Package: | micro-X |
Mounting: | SMD |
Order code: | AT-60570 |
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Silicon bipolar NPN RF transistor, 70 mil package Avantek AT-60570 |
Polarity: | NPN |
Collector-emitter voltage (Vce max): | 12 V |
Transition frequency (fT): | 8 GHz |
Collector current (Ic max): | 40 mA |
Dissipated power (Ptot): | 400 mW |
Mounting: | surface |
Package: | 70 mil |
Package type : | ceramic |
Order code: | AT-280 |
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5-bit digital variable attenuator, 15.5 dB, 0.5 dB/step, SOIC-16 M/A-COM AT-280TR |
Conditions: | N- (The product is brand new but it comes from an old production) |
Input power: | 34 dBm |
Control voltage: | -5V ~ 0V |
Min. Freq.: | 0 Hz |
Max. Freq.: | 2 GHz |
Max. attenuation: | 15.5 dB |
Resolution : | 0.5 dB / step |
Insertion loss (max.): | 2 dB |
Operating temp. (°C): | -40 / +85 |
Package: | SOIC-16 |
Mounting : | SMD |
Order code: | ATTC-ATC01DB |
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Flange mount attenuator, 1dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P01DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 1 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC02DB |
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Flange mount attenuator, 2dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P02DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 2 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | BAT45 |
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Schottky diode, 15V, 30mA, 1pF, DO-35 STMicroelectronics BAT45 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 15 V |
Forward voltage (VF typ., IF = 1 mA) : | 350 mV |
Forward current (IF): | 30 mA |
Capacitance (CJ): | 1 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT46 |
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Schottky diode, 100v, 150mA, 10pF, DO-35 STMicroelectronics BAT46 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 100 V |
Forward voltage (VF typ., IF = 1 mA) : | 330 mV |
Forward current (IF): | 150 mA |
Capacitance (CJ): | 10 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT43 |
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Schottky diode, 30V, 200mA, 6pF, DO-35 STMicroelectronics BAT43 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 30 V |
Forward voltage (VF typ., IF = 1 mA) : | 300 mV |
Forward current (IF): | 200 mA |
Capacitance (CJ): | 6 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT42 |
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Schottky diode, 30V, 200mA, 7pF, DO-35 STMicroelectronics BAT42 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 30 V |
Forward voltage (VF typ., IF = 1 mA) : | 280 mV |
Forward current (IF): | 200 mA |
Capacitance (CJ): | 7 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT17-04 |
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Pair in series Schottky diode, 4V, 130mA, 0.55pF, SOT-23 Siemens BAT17-04 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 4 V |
Forward voltage (VF typ., IF = 1 mA) : | 340 mV |
Forward current (IF): | 130 mA |
Capacitance (CJ): | 0.55 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | series pair |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT41 |
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Schottky diode, 100V, 100mA, 2pF, DO-35 STMicroelectronics BAT41 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 100 V |
Forward voltage (VF typ., IF = 1 mA) : | 400 mV |
Forward current (IF): | 100 mA |
Capacitance (CJ): | 2 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT48 |
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Schottky diode, 40V, 350mA, 30pF, DO-35 STMicroelectronics BAT48RL |
Conditions: | N (The product is brand new) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 300 mV |
Forward current (IF): | 350 mA |
Capacitance (CJ): | 30 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT62-02W |
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Schottky diode, 40V, 40mA, 0.4pF, SCD-80 Infineon BAT62-02W |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 430 mV |
Forward current (IF): | 40 mA |
Capacitance (CJ): | 0.4 pF |
Package: | SCD-80 |
Mounting: | SMD |
Configuration: | single |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT68 |
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Schottky diode, 8V, 130mA, 1pF, SOT-23 Siemens BAT68 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 8 V |
Forward voltage (VF typ., IF = 1 mA) : | 340 mV |
Forward current (IF): | 130 mA |
Capacitance (CJ): | 1 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | single |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT82 |
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Schottky diode Philips BAT82 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 50 V |
Forward voltage (VF typ., IF = 1 mA) : | 380 mV |
Forward current (IF): | 30 mA |
Capacitance (CJ): | 1.4 pF |
Package: | DO-34 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 125 |
Low Barrier / Zero Bias: | No |
Order code: | BAT64-04 |
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Pair in series Schottky diode, 40V, 250mA, 4pF, SOT-23 Siemens BAT64-04 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 320 mV |
Forward current (IF): | 250 mA |
Capacitance (CJ): | 4 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | series pair |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT64 |
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Schottky diode, 40V, 250mA, 4pF, SOT-23 Infineon BAT64 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 320 mV |
Forward current (IF): | 250 mA |
Capacitance (CJ): | 4 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | single |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT62-03W |
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Schottky diode, 40V, 40mA, 0.35pF, SOD-323 Siemens BAT62-03W |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 430 mV |
Forward current (IF): | 40 mA |
Capacitance (CJ): | 0.35 pF |
Package: | SOD-323 |
Mounting: | SMD |
Configuration: | single |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAT15-03W |
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Low barrier Schottky diode, 4V, 110mA, 0.3pF, SOD-323 Infineon BAT15-03W E6327 |
Conditions: | N (The product is brand new) |
Breakdown voltage (VBR): | 4 V |
Forward voltage (VF typ., IF = 1 mA) : | 230 mV |
Forward current (IF): | 110 mA |
Capacitance (CJ): | 0.3 pF |
Package: | SOD-323 |
Mounting: | SMD |
Configuration: | single |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | Yes |
Order code: | BAS40-07 |
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Unconnected pair Schottky diode, 40V, 120mA, 4pF, SOT-23 Siemens BAS40-07 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 310 mV |
Forward current (IF): | 120 mA |
Capacitance (CJ): | 4 pF |
Package: | SOT-143 |
Mounting: | SMD |
Configuration: | unconnected pair |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | ATTC-ATC20DB |
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Flange mount attenuator, 20dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P20DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 20 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC30DB |
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Flange mount attenuator, 30dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P30DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 30 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC17DB |
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Flange mount attenuator, 17dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P17DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 17 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC10DB |
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Flange mount attenuator, 10dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P10DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 10 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC03DB |
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Flange mount attenuator, 3dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P03DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 3 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTC-ATC06DB |
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Flange mount attenuator, 6dB, 150W, dc-3GHz ATC / Kyocera AVX FA10975P06DBFBK |
Conditions: | N (The product is brand new) |
Mounting: | flange |
Impedance: | 50 Ohm |
Attenuation: | 6 dB |
Maximum frequency: | 3 GHz |
Power: | 150 W |
Order code: | ATTV-MD044 |
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Solid state coaxial variable attenuator, 50Ω, 0 - 63 dB Micro Dynamiccs MD044 |
Conditions: | N (The product is brand new) |
Type: | coaxial |
Min. attenuation: | 0 dB |
Max. attenuation: | 63 dB |
Min. frequency: | 2 GHz |
Max. frequency: | 7 GHz |
Impedance: | 50 Ω |
Connectors: | SMA plug / SMA jack |
Order code: | AWB-15 |
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Ultra wideband amplifier, 9 kHz - 15 GHz, SMA female MITEQ JST10G3S7VMZ-SMP |
Conditions: | N- (The product is brand new but it comes from an old production) |
Min. frequency : | 9 kHz |
Max. frequency: | 15 GHz |
Gain: | 24 dB |
Power output (P1dB): | 17 dBm |
Supply voltage min. or nominal: | 11 V |
Type : | connector |
Connectors : | SMA female |
Order code: | BAS40-04 |
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Pair in series Schottky diode, 40V, 120mA, 4pF, SOT-23 Siemens BAS40-04 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 310 mV |
Forward current (IF): | 120 mA |
Capacitance (CJ): | 4 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | series pair |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BAS40-05 |
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Common cathode pair Schottky diode, 40V, 120mA, 4pF, SOT-23 Siemens BAS40-05 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 40 V |
Forward voltage (VF typ., IF = 1 mA) : | 310 mV |
Forward current (IF): | 120 mA |
Capacitance (CJ): | 4 pF |
Package: | SOT-23 |
Mounting: | SMD |
Configuration: | common cathode pair |
Junction temp. (Tj) (°C): | 150 |
Low Barrier / Zero Bias: | No |
Order code: | BA481 |
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Schottky diode, 4V, 350mA, 1.1pF, DO-35 Philips BA481 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Breakdown voltage (VBR): | 4 V |
Forward voltage (VF typ., IF = 1 mA) : | 350 mV |
Forward current (IF): | 30 mA |
Capacitance (CJ): | 1.1 pF |
Package: | DO-35 |
Mounting: | axial |
Configuration: | single |
Junction temp. (Tj) (°C): | 100 |
Low Barrier / Zero Bias: | No |
Order code: | BA281 |
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Detector and mixer Silicon diode Philips BA281 |
Conditions: | N- (The product is brand new but it comes from an old production) |
Reverse voltage (VR): | 50 V |
Forward voltage (VF): | 0.4 V |
Forward current max. (IF) : | 200 mA |
Junction capacitance (Cj): | 1.2 pF |
Configuration: | single |
Operating temperature (°C): | -65 / +200 |
Package: | DO-35 |
Mounting : | thru-hole |
Order code: | AWB-18A |
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Ultra wideband amplifier, 20 kHz - 18 GHz, SMA female SDL WBA3-4-15G28VP22D |
Conditions: | N- (The product is brand new but it comes from an old production) |
Min. frequency : | 20 kHz |
Max. frequency: | 18 GHz |
Gain: | 23 dB |
Power output (P1dB): | 21.5 dBm |
Supply voltage min. or nominal: | 14 V |
Supply voltage max.: | 18 V |
Type : | connector |
Connectors : | SMA female |