mis | Transistors - RF FET and GaAs-FET

Low noise GaAs-FET

Order code:	EFA025A-70
	Low noise GaAs-FET Excelics EFA025A-70
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	6 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	52 mA
Associated gain (Ga):	10 dB
Power dissipation:	310 mW
Max. frequency:	26 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise GaAs-HEMT

Order code:	MGF4953B
	Low noise GaAs-HEMT MITSUBISHI MGF4953B-70
Conditions:	N (The product is brand new)
Type:	GaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	60 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	50 mW
Max. frequency:	26 GHz
Package:	ceramic chip
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4919G
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4919G
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	13.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4914D
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4914D
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Low noise InGaAs-HEMT

Order code:	MGF4714CP
	Low noise InGaAs-HEMT MITSUBISHI MGF4714CP
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-22 (86 mil) plastic
Mounting:	SMD

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Low noise pHEMT

Order code:	ATF-35076
	Low noise pHEMT Hewlett-Packard ATF-35076-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	pHEMT
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	50 mA
Associated gain (Ga):	11 dB
Power dissipation:	225 mW
Max. frequency:	18 GHz
Package:	70 mil ceramic
Mounting:	SMD

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General purpose GaAs-FET

Order code:	ATF-26884
	General purpose GaAs-FET Agilent Technologies ATF-26884-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	6 dB
Power dissipation:	275 mW
Max. frequency:	16 GHz
Package:	85 mil plastic
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13736
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13736-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Generla purpose low noise GaAs-FET

Order code:	ATF-21186
	Generla purpose low noise GaAs-FET Agilent Technologies ATF-21186-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	120 mA
Associated gain (Ga):	12.6 dB
Power dissipation:	400 mW
Max. frequency:	6 GHz
Package:	85 mil plastic
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13336
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-13170
	Low noise GaAs-FET Hewlett-Packard ATF-13170
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	10 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	70 mil ceramic
Mounting:	SMD

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General purpose low noise GaAs-FET

Order code:	ATF-10736
	General purpose low noise GaAs-FET Hewlett-Packard ATF-10736-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-13136
	Low noise GaAs-FET Hewlett-Packard ATF-13136-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9.5 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-10136
	Low noise GaAs-FET Agilent Technologies ATF-10136-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	CFY-10
	Low noise and high dynamic GaAs-FET Siemens CFY 10
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	100 mA
Associated gain (Ga):	10 dB
Power dissipation:	500 mW
Max. frequency:	12 GHz
Package:	100 mil
Mounting:	SMD

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General purpose dual gate GaAs-FET

Order code:	CF-750
	General purpose dual gate GaAs-FET Siemens CF 750
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	8 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	80 mA
Associated gain (Ga):	10 dB
Power dissipation:	300 mW
Max. frequency:	3 GHz
Package:	SOT-143
Mounting:	SMD

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