K&L Microwave | Transistors - RF FET and GaAs-FET

Low noise and high dynamic GaAs-FET

Order code:	ATF-13336
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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General purpose GaAs-FET

Order code:	ATF-26884
	General purpose GaAs-FET Agilent Technologies ATF-26884-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	6 dB
Power dissipation:	275 mW
Max. frequency:	16 GHz
Package:	85 mil plastic
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13736
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13736-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise pHEMT

Order code:	ATF-35076
	Low noise pHEMT Hewlett-Packard ATF-35076-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	pHEMT
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	50 mA
Associated gain (Ga):	11 dB
Power dissipation:	225 mW
Max. frequency:	18 GHz
Package:	70 mil ceramic
Mounting:	SMD

Go to product page ATF-35076