IMS | Transistors - RF power FET and GaAs-FET

Internally matched power GaAs-FET

Order code:	MGFK35V2732
	Internally matched power GaAs-FET MITSUBISHI MGFK35V2732
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	2.8 A
Gain:	7 dB
Output power:	35.5 dBm
Power dissipation:	27.2 W
Min. frequency:	12.7 GHz
Max. frequency :	13.2 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	MGFC36V7177
	Internally matched power GaAs-FET MITSUBISHI MGFC36V7177
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	2.8 A
Gain:	9 dB
Output power:	36 dBm
Power dissipation:	25 W
Min. frequency:	7.1 GHz
Max. frequency :	7.7 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

Go to product page MGFC36V7177

Internally matched power GaAs-FET

Order code:	MGFC39V7177A
	Internally matched power GaAs-FET MITSUBISHI MGFC39V7177A
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-15 V
Drain current (Id):	7.5 A
Gain:	8 dB
Output power:	39 dBm
Power dissipation:	42.8 W
Min. frequency:	7.1 GHz
Max. frequency :	7.7 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

Go to product page MGFC39V7177A

Internally matched power GaAs-pHEMT

Order code:	MRFG35030R5
	Internally matched power GaAs-pHEMT Freescale Semiconductor MRFG35030R5
Conditions:	N (The product is brand new)
Type:	AlGaAs-pHEMT
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Gain:	12 dB
Output power:	44.8 dBm
Power dissipation:	79 W
Min. frequency:	3.4 GHz
Max. frequency :	3.6 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	FMC3485VA-03
	Internally matched power GaAs-FET Fujitsu FMC3485VA-03
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	10 V
Drain current (Id):	270 mA
Gain:	20 dB
Output power:	24 dBm
Min. frequency:	2.5 GHz
Max. frequency :	9.5 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

Go to product page FMC3485VA-03

Power GaAs-FET

Order code:	FLX102MB
	Power GaAs-FET Fujitsu FLX102MB
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	400 mA
Gain:	7.5 dB
Output power:	30 dBm
Power dissipation:	7.5 W
Max. frequency :	14 GHz
Internally matched:	No
Package:	metal-ceramic hermetic
Mounting :	flange

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Internally matched power GaAs-FET

Order code:	FLM7177-8D
	Internally matched power GaAs-FET Fujitsu FLM7177-8D
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	2.2 A
Gain:	7 dB
Output power:	39 dBm
Power dissipation:	42.8 W
Min. frequency:	6.9 GHz
Max. frequency :	7.9 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

Go to product page FLM7177-8D

Internally matched power GaAs-FET

Order code:	FLM7177-4D
	Internally matched power GaAs-FET Fujitsu FLM7177-4D
Conditions:	N (The product is brand new)
Type:	GaAs-FET
Drain-source voltage (Vds):	15 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	1.8 A
Gain:	8 dB
Output power:	36 dBm
Power dissipation:	25 W
Min. frequency:	7 GHz
Max. frequency :	7.9 GHz
Internally matched:	Yes
Package:	metal-ceramic hermetic
Mounting :	flange

Go to product page FLM7177-4D

Internally matched power FET

Order code:	EIB1415-2P
	Internally matched power FET Excelics EIB1415-2P
Conditions:	N (The product is brand new)
Type:	FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	850 mA
Gain:	7.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	14.4 GHz
Max. frequency :	15.35 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange

Go to product page EIB1415-2P

Internally matched power FET

Order code:	EIB1213-2P
	Internally matched power FET Excelics EIB1213-2P
Conditions:	N (The product is brand new)
Type:	FET
Drain-source voltage (Vds):	10 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	850 mA
Gain:	8.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	12.75 GHz
Max. frequency :	13.25 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange

Go to product page EIB1213-2P