IMS | Transistors - RF FET and GaAs-FET

Low noise GaAs-HEMT

Order code:	MGF4953B
	Low noise GaAs-HEMT MITSUBISHI MGF4953B-70
Conditions:	N (The product is brand new)
Type:	GaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	60 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	50 mW
Max. frequency:	26 GHz
Package:	ceramic chip
Mounting:	SMD

Go to product page MGF4953B

Low noise and high dynamic GaAs-FET

Order code:	ATF-13336
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

Go to product page ATF-13336