MITSUBISHI | Transistors - RF FET and GaAs-FET

Low noise GaAs-HEMT

Order code:	MGF4953B
	Low noise GaAs-HEMT MITSUBISHI MGF4953B-70
Conditions:	N (The product is brand new)
Type:	GaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	60 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	50 mW
Max. frequency:	26 GHz
Package:	ceramic chip
Mounting:	SMD

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Low noise InGaAs-HEMT

Order code:	MGF4714CP
	Low noise InGaAs-HEMT MITSUBISHI MGF4714CP
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-22 (86 mil) plastic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4919G
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4919G
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	13.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4914D
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4914D
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	11.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

Go to product page MGF4914D