Erie | Transistors - RF FET and GaAs-FET

Low noise GaAs-HEMT

Order code:	MGF4953B
	Low noise GaAs-HEMT MITSUBISHI MGF4953B-70
Conditions:	N (The product is brand new)
Type:	GaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	60 mA
Associated gain (Ga):	10.5 dB
Power dissipation:	50 mW
Max. frequency:	26 GHz
Package:	ceramic chip
Mounting:	SMD

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Ultra low noise InGaAs-HEMT

Order code:	MGF4919G
	Ultra low noise InGaAs-HEMT MITSUBISHI MGF4919G
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	InGaAs-HEMT
Drain-source voltage (Vds):	2 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	60 mA
Associated gain (Ga):	13.5 dB
Power dissipation:	50 mW
Max. frequency:	18 GHz
Package:	GD-16 (70 mil) ceramic
Mounting:	SMD

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Low noise GaAs-FET

Order code:	ATF-10136
	Low noise GaAs-FET Agilent Technologies ATF-10136-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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General purpose low noise GaAs-FET

Order code:	ATF-10736
	General purpose low noise GaAs-FET Hewlett-Packard ATF-10736-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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Low noise pHEMT

Order code:	ATF-35076
	Low noise pHEMT Hewlett-Packard ATF-35076-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	pHEMT
Drain-source voltage (Vds):	4 V
Gate-source voltage (Vgs) :	-3 V
Drain current (Id):	50 mA
Associated gain (Ga):	11 dB
Power dissipation:	225 mW
Max. frequency:	18 GHz
Package:	70 mil ceramic
Mounting:	SMD

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Low noise E-pHEMT

Order code:	ATF-54143
	Low noise E-pHEMT Agilent Technologies ATF-54143-TR1G
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	E-pHEMT
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	120 mA
Associated gain (Ga):	16.6 dB
Power dissipation:	360 mW
Max. frequency:	6 GHz
Package:	SOT-343
Mounting:	SMD

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