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Maybe not all know that the first GaAs FET was born in California in 1965 while the first commercial products were available in 1967 made by Fairchild. It was then the turn of HP in 1972 and Fujitsu in 1973 to greatly improve performance for applications that really concerned the microwave.
The first HEMT saw the light in 1985 by the Californian Gould.
ADVICE ON LOW NOISE GA-AS-FETs CHOICE
Some manufacturers provide their devices both with long leads (sold individually in small amounts) and with short leads usually in tape reels of 1000 pcs. The only difference is that the models with the short leads, on tape, are used in pick and place machines for SMD components placing in large volumes so they have a lower price. In the selection is a good thing to examine this fact and take advantage of a more attractive price. Eg: MGF 1303 long leads = MGF1903 short leads, even for models MGF 43 ... with long leads = MGF 49 ... with short leads.
GaAs FET = Gallium Arsenide FET
HEMT = High Electron Mobility Transistor
PHEMT = Pseudomorphic HEMT
E-PHEMT = Enhanced PHEMT
Low noise general purpose GaAs-MESFET|
|Conditions:||N (The product is brand new)|
|Drain-source voltage (Vds):||5 V|
|Gate-source voltage (Vgs) :||-6 V|
|Drain current (Id):||120 mA|
|Associated gain (Ga):||13 dB|
|Power dissipation:||270 mW|
|Max. frequency:||18 GHz|
|Package:||70 mil ceramic|