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Here are listed some transistors particularly suitable for class A ultralinear applications:
Warning: The following power values are referred to A class TV usage.
These transistors are also listed also on other categories as they are specified for other use than class A, for the same device characteristics of gain, efficiency and output power are significantly reduced in class A for the benefit of a much higher linearity.
Class A output level is measured with intermodulation IMD @ -58 / -60 dB (CCIR rules) or -54 / -58 dB for ≥ 1 W devices, dBmV = signal level in dB over 1 mV.
NPN linear RF power transistor
|Conditions:||N (The product is brand new)|
|Output power:||12 W|
|Dissipated power (Ptot):||80 W|
|Collector current (Ic max):||3.5 A|
|Collector-emitter voltage (Vce max):||50 V|
|Supply voltage:||26.5 V|
|Mounting or package:||flange|