N-Channel MOSFET low noise amplifier

• Type:
  MOSFET
• Polarity:
  N-channel
• Configuration:
  dual-gate
• Drain-source voltage (V_ds):
  12 V
• Drain current (I_d):
  30 mA
• Power dissipation:
  200 mW
• Package:
  X-plast
• Mounting:
  SMD

N-Channel MOSFET low noise amplifier

These MOSFETs, Siemens original, have a better trasconduttance, 1μm gate, less capacity, less noise and usable up to 1.5 GHz with a low noise figure

- 0.6 dBNF 28 dBG @ 200 MHz
- 1 dBNF 20 dBG @ 800 MHz

This product is equivalent of BF998 (SMD version) that is cheaper

(Note: only the Siemens version can guarantee these noise figure performances with AGC range > 40 dB)