Internally matched power FET

Internally matched power FET

• Type:
  FET
• Drain-source voltage (V_ds):
  10 V
• Gate-source voltage (V_gs) :
  -5 V
• Drain current (I_d):
  850 mA
• Gain:
  7.5 dB
• Output power:
  33 dBm
• Power dissipation:
  16 W
• Min. frequency:
  14.4 GHz
• Max. frequency :
  15.35 GHz
• Internally matched:
  Yes
• Package:
  metal-ceramic
• Mounting :
  flange