Internally matched power GaAs-FET

Internally matched power GaAs-FET

• Type:
  GaAs-FET
• Drain-source voltage (V_ds):
  15 V
• Gate-source voltage (V_gs) :
  -5 V
• Drain current (I_d):
  1.7 A
• Gain:
  7.5 dB
• Output power:
  36 dBm
• Power dissipation:
  25 W
• Min. frequency:
  9.3 GHz
• Max. frequency :
  10.7 GHz
• Internally matched:
  Yes
• Package:
  metal-ceramic hermetic
• Mounting :
  flange