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Transistors - RF power FET and GaAs-FET

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Type
Drain-source voltage (Vds)
Gate-source voltage (Vgs)
Drain current (Id)
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Output power
Power dissipation
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Internally matched
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Order code ATF-45101
Agilent Technologies ATF-45101
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Agilent Technologies ATF-45101

Medium power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 14 V
  • Gate-source voltage (Vgs): -7 V
  • Drain current (Id): 600 mA
  • Gain: 10 dB
  • Output power: 29 dBm
  • Power dissipation: 3.6 W
  • Min. frequency: 2 GHz
  • Max. frequency: 8 GHz
  • Internally matched: No
  • Package: 100 mil
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:39,50
5+ pc:38,00
10+ pc:37,00
In stock: 20 pc
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(Prices VAT excluded)

Order code CLY-10
Infineon CLY 10
Image is for illustrative purposes, see product details
Infineon CLY 10

Power GaAs-FET amplifier

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 9 V
  • Gate-source voltage (Vgs): -6 V
  • Drain current (Id): 2.1 A
  • Gain: 9 dB
  • Output power: 28.5 dBm
  • Power dissipation: 3.5 W
  • Max. frequency: 6 GHz
  • Internally matched: No
  • Package: SOT-223
  • Mounting: SMD
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:6,00
5+ pc:5,70
10+ pc:5,40
In stock: 1076 pc
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Order code CLY-2
Infineon CLY 2

Power GaAs-FET amplifier

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 9 V
  • Gate-source voltage (Vgs): -6 V
  • Drain current (Id): 600 mA
  • Gain: 15.5 dB
  • Output power: 23.5 dBm
  • Power dissipation: 900 mW
  • Max. frequency: 6 GHz
  • Internally matched: No
  • Package: MW-6
  • Mounting: SMD
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:4,00
5+ pc:3,80
10+ pc:3,60
In stock: 197 pc
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Order code EIB1213-2P
Excelics EIB1213-2P
Image is for illustrative purposes, see product details
Excelics EIB1213-2P

Internally matched power FET

  • Type: FET
  • Drain-source voltage (Vds): 10 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 850 mA
  • Gain: 8.5 dB
  • Output power: 33 dBm
  • Power dissipation: 16 W
  • Min. frequency: 12.75 GHz
  • Max. frequency: 13.25 GHz
  • Internally matched: Yes
  • Package: metal-ceramic
  • Mounting: flange
More details
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:95,00
4+ pc:86,50
10+ pc:79,00
In stock: 43 pc
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Order code EIB1415-2P
Excelics EIB1415-2P
Image is for illustrative purposes, see product details
Excelics EIB1415-2P

Internally matched power FET

  • Type: FET
  • Drain-source voltage (Vds): 10 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 850 mA
  • Gain: 7.5 dB
  • Output power: 33 dBm
  • Power dissipation: 16 W
  • Min. frequency: 14.4 GHz
  • Max. frequency: 15.35 GHz
  • Internally matched: Yes
  • Package: metal-ceramic
  • Mounting: flange
More details
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:105,00
4+ pc:98,00
10+ pc:92,00
In stock: 22 pc
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Order code EPA240B-100P
Excelics EPA240B-100P
Image is for illustrative purposes, see product details
Excelics EPA240B-100P

Power HJFET

  • Type: HJFET
  • Drain-source voltage (Vds): 8 V
  • Gate-source voltage (Vgs): -3 V
  • Drain current (Id): 710 mA
  • Gain: 10.5 dB
  • Output power: 32.5 dBm
  • Power dissipation: 5.7 W
  • Max. frequency: 26 GHz
  • Internally matched: No
  • Package: 100 mil
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:54,00
5+ pc:49,00
10+ pc:44,00
30+ pc:39,00
In stock: 72 pc
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(Prices VAT excluded)

Order code FLC091WF
Fujitsu FLC091WF
Image is for illustrative purposes, see product details
Fujitsu FLC091WF

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 300 mA
  • Gain: 8.5 dB
  • Output power: 28.8 dBm
  • Power dissipation: 4.16 W
  • Max. frequency: 12 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:39,00
5+ pc:36,00
10+ pc:33,00
In stock: 16 pc
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Order code FLC161WF
Fujitsu FLC161WF
Image is for illustrative purposes, see product details
Fujitsu FLC161WF

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 600 mA
  • Gain: 7.5 dB
  • Output power: 31.8 dBm
  • Power dissipation: 7.5 W
  • Max. frequency: 12 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:82,00
In stock: 2 pc
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Order code FLK012WF
Fujitsu FLK012WF
Image is for illustrative purposes, see product details
Fujitsu FLK012WF

Medium-power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 60 mA
  • Gain: 7.5 dB
  • Output power: 20.5 dBm
  • Power dissipation: 1.15 W
  • Max. frequency: 16 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:25,00
4+ pc:22,50
In stock: 17 pc
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Order code FLK017WF
Fujitsu FLK017WF
Image is for illustrative purposes, see product details
Fujitsu FLK017WF

Medium-power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 60 mA
  • Gain: 7.5 dB
  • Output power: 20.5 dBm
  • Power dissipation: 1.15 W
  • Max. frequency: 16 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:26,00
4+ pc:23,50
In stock: 15 pc
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Order code FLK052WG
Fujitsu FLK052WG
Image is for illustrative purposes, see product details
Fujitsu FLK052WG

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 200 mA
  • Gain: 8 dB
  • Output power: 27 dBm
  • Power dissipation: 3.75 W
  • Max. frequency: 16 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:49,00
4+ pc:46,00
In stock: 2 pc
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Order code FLL171ME
Fujitsu FLL171ME
Image is for illustrative purposes, see product details
Fujitsu FLL171ME

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 600 mA
  • Gain: 12.5 dB
  • Output power: 32.5 dBm
  • Power dissipation: 7.5 W
  • Max. frequency: 5 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:33,00
In stock: 13 pc
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Order code FLM0910-4F
Eudyna FLM0910-4F
Image is for illustrative purposes, see product details
Eudyna FLM0910-4F

Internally matched power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 1.7 A
  • Gain: 7.5 dB
  • Output power: 36 dBm
  • Power dissipation: 25 W
  • Min. frequency: 9.3 GHz
  • Max. frequency: 10.7 GHz
  • Internally matched: Yes
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
RoHS: Yes
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:158,00
In stock: 17 pc
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(Prices VAT excluded)

Order code FLM7177-4D
Fujitsu FLM7177-4D
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Fujitsu FLM7177-4D

Internally matched power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 1.8 A
  • Gain: 8 dB
  • Output power: 36 dBm
  • Power dissipation: 25 W
  • Min. frequency: 7 GHz
  • Max. frequency: 7.9 GHz
  • Internally matched: Yes
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:125,00
In stock: 12 pc
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Order code FLM7177-8D
Fujitsu FLM7177-8D
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Fujitsu FLM7177-8D

Internally matched power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 2.2 A
  • Gain: 7 dB
  • Output power: 39 dBm
  • Power dissipation: 42.8 W
  • Min. frequency: 6.9 GHz
  • Max. frequency: 7.9 GHz
  • Internally matched: Yes
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:135,00
4+ pc:125,00
In stock: 30 pc
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Order code FLR014FH
Fujitsu FLR014FH
Image is for illustrative purposes, see product details
Fujitsu FLR014FH

Medium power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 60 mA
  • Gain: 6.5 dB
  • Output power: 19.5 dBm
  • Power dissipation: 1 W
  • Max. frequency: 20 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: SMD
More details
Conditions: New
Unit weight: 0.05 g
Minimum:1 pc
Multiple:1 pc
1+ pc:8,80
5+ pc:8,20
10+ pc:7,80
In stock: 124 pc
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Order code FLR016FH
Fujitsu FLR016FH
Image is for illustrative purposes, see product details
Fujitsu FLR016FH

Medium power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 13 V
  • Gate-source voltage (Vgs): -3 V
  • Drain current (Id): 70 mA
  • Gain: 8.5 dB
  • Output power: 20 dBm
  • Power dissipation: 1.15 W
  • Max. frequency: 20 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: SMD
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:11,20
5+ pc:10,60
10+ pc:9,80
In stock: 429 pc
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(Prices VAT excluded)

Order code FLU10XM
Fujitsu FLU10XM
Image is for illustrative purposes, see product details
Fujitsu FLU10XM

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 300 mA
  • Gain: 14.5 dB
  • Output power: 29.5 dBm
  • Power dissipation: 4.16 W
  • Max. frequency: 5 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: SMD
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:5,95
5+ pc:5,45
10+ pc:5,05
30+ pc:4,75
100+ pc:4,45
250+ pc:4,15
In stock: 37 pc
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Order code FLX102MH-12
Fujitsu FLX102MH-12

Power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 15 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 400 mA
  • Gain: 7.5 dB
  • Output power: 30 dBm
  • Power dissipation: 7.5 W
  • Max. frequency: 14 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:72,00
In stock: 12 pc
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(Prices VAT excluded)

Order code FMC3485VA-03
Fujitsu FMC3485VA-03
Image is for illustrative purposes, see product details
Fujitsu FMC3485VA-03

Internally matched power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 10 V
  • Drain current (Id): 270 mA
  • Gain: 20 dB
  • Output power: 24 dBm
  • Min. frequency: 2.5 GHz
  • Max. frequency: 9.5 GHz
  • Internally matched: Yes
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 10.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:49,00
3+ pc:45,00
10+ pc:41,50
In stock: 22 pc
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(Prices VAT excluded)

Order code FMM5061VF
Fujitsu FMM5061VF
Image is for illustrative purposes, see product details
Fujitsu FMM5061VF

Internally matched power MMIC

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 10 V
  • Gate-source voltage (Vgs): -7 V
  • Drain current (Id): 1.7 A
  • Gain: 26 dB
  • Output power: 33 dBm
  • Min. frequency: 9.5 GHz
  • Max. frequency: 13.3 GHz
  • Internally matched: Yes
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 0.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:150,00
In stock: 5 pc
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Order code FSX52WF
Fujitsu FSX52WF
Image is for illustrative purposes, see product details
Fujitsu FSX52WF

Medium-power GaAs-FET

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 12 V
  • Gate-source voltage (Vgs): -5 V
  • Drain current (Id): 150 mA
  • Gain: 10 dB
  • Output power: 23 dBm
  • Power dissipation: 1.5 W
  • Max. frequency: 15 GHz
  • Internally matched: No
  • Package: metal-ceramic hermetic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:23,00
5+ pc:21,50
10+ pc:20,00
30+ pc:14,80
100+ pc:16,90
In stock: 297 pc
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(Prices VAT excluded)

Order code KGF1323C
OKI KGF1323C
Image is for illustrative purposes, see product details
OKI KGF1323C

Power GaAs-FET amplifier

  • Type: GaAs-FET
  • Drain-source voltage (Vds): 10 V
  • Gate-source voltage (Vgs): -6 V
  • Drain current (Id): 3 A
  • Gain: 9.5 dB
  • Output power: 33.4 dBm
  • Power dissipation: 5 W
  • Max. frequency: 3 GHz
  • Internally matched: No
  • Package: SOT-89
  • Mounting: SMD
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:5,60
5+ pc:5,30
10+ pc:4,90
In stock: 158 pc
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(Prices VAT excluded)

Order code LP1500P100
Filtronic LP1500P100
Image is for illustrative purposes, see product details
Filtronic LP1500P100

Power AlGaAs-pHEMT

  • Type: AlGaAs-pHEMT
  • Drain-source voltage (Vds): 12 V
  • Gate-source voltage (Vgs): -4 V
  • Drain current (Id): 490 A
  • Gain: 9 dB
  • Output power: 31 dBm
  • Power dissipation: 3 W
  • Max. frequency: 15 GHz
  • Internally matched: No
  • Package: ceramic
  • Mounting: flange
More details
Conditions: New
Unit weight: 1.00 g
Minimum:1 pc
Multiple:1 pc
1+ pc:49,00
5+ pc:47,00
10+ pc:45,00
30+ pc:43,00
In stock: 37 pc
buy
(Prices VAT excluded)

Pages
1
2