Agilent Technologies

General purpose GaAs-FET

Order code:	ATF-26884
	General purpose GaAs-FET Agilent Technologies ATF-26884-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	7 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	6 dB
Power dissipation:	275 mW
Max. frequency:	16 GHz
Package:	85 mil plastic
Mounting:	SMD

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Crossover quad Schottky diode, 15V, 10mA, 1pF, SOT-143

Order code:	HSMS-2829
	Crossover quad Schottky diode, 15V, 10mA, 1pF, SOT-143 Agilent Technologies HSMS-2829
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	15 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	10 mA
Capacitance (CJ):	1 pF
Package:	SOT-143
Mounting:	SMD
Configuration:	quad crossover
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Bridge quad Schottky diode, 15V, 10mA, 1pF, SOT-363

Order code:	HSMS-282P
	Bridge quad Schottky diode, 15V, 10mA, 1pF, SOT-363 Agilent Technologies HSMS-282P-TR1
Breakdown voltage (VBR):	15 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	10 mA
Capacitance (CJ):	1 pF
Package:	SOT-363
Mounting:	SMD
Configuration:	quad bridge
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Unconnected pair Schottky diode, 15V, 10mA, 1pF, SOT-143

Order code:	HSMS-2825
	Unconnected pair Schottky diode, 15V, 10mA, 1pF, SOT-143 Agilent Technologies HSMS-2825
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	15 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	10 mA
Capacitance (CJ):	1 pF
Package:	SOT-143
Mounting:	SMD
Configuration:	unconnected pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Common cathode pair Schottky diode, 15V, 10mA, 1pF, SOT-23

Order code:	HSMS-2824
	Common cathode pair Schottky diode, 15V, 10mA, 1pF, SOT-23 Agilent Technologies HSMS-2824
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	15 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	10 mA
Capacitance (CJ):	1 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	common cathode pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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common cathode pair Schottky diode, 20V, 35mA, 1.2pF, SOT-23

Order code:	HSMS-2814
	common cathode pair Schottky diode, 20V, 35mA, 1.2pF, SOT-23 Agilent Technologies HSMS-2814
Breakdown voltage (VBR):	20 V
Forward voltage (VF typ., IF = 1 mA) :	360 mV
Forward current (IF):	35 mA
Capacitance (CJ):	1.2 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	common cathode pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Common anode pair Schottky diode, 15V, 10mA, 1pF, SOT-23

Order code:	HSMS-2823
	Common anode pair Schottky diode, 15V, 10mA, 1pF, SOT-23 Agilent Technologies HSMS-2823
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	15 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	10 mA
Capacitance (CJ):	1 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	common anode pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Ring quad Schottky diode, 4V, 0.26pF, SOT-143

Order code:	HSMS-8207
	Ring quad Schottky diode, 4V, 0.26pF, SOT-143 Agilent Technologies HSMS-8207
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	4 V
Forward voltage (VF typ., IF = 1 mA) :	300 mV
Capacitance (CJ):	0.26 pF
Package:	SOT-143
Mounting:	SMD
Configuration:	quad ring
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Si MMIC amplifier, micro-X

Order code:	INA-10386
	Si MMIC amplifier, micro-X Agilent Technologies INA-10386-BLK
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	0 Hz
Max. frequency:	1800 MHz
Operating voltage:	6 V
Operating current:	45 mA
Dissipated power:	750 mW
Gain (max.):	26 dB
Output power (max.):	10 dBm
Noise figure (min.):	3.8 dB
Package:	micro-X
Mounting:	SMD

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Si MMIC amplifier, micro-X

Order code:	MSA-0386
	Si MMIC amplifier, micro-X Agilent Technologies MSA-0386-BLK
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	0 Hz
Max. frequency:	2.4 GHz
Operating voltage:	5 V
Operating current:	35 mA
Dissipated power:	400 mW
Gain (max.):	12.5 dB
Output power (max.):	6 dBm
Noise figure (min.):	10 dB
Package:	micro-X
Mounting:	SMD

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Si MMIC amplifier, micro-X

Order code:	MSA-0686
	Si MMIC amplifier, micro-X Agilent Technologies MSA-0686
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	0 Hz
Max. frequency:	800 MHz
Operating voltage:	3.5 V
Operating current:	16 mA
Dissipated power:	200 mW
Gain (max.):	20 dB
Output power (max.):	2 dBm
Noise figure (min.):	3 dB
Package:	micro-X
Mounting:	SMD

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GaAs RFIC amplifier, SOT-363

Order code:	MGA-85563
	GaAs RFIC amplifier, SOT-363 Agilent Technologies MGA-85563-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	800 MHz
Max. frequency:	6 GHz
Operating voltage:	3 V
Operating current:	15 mA
Gain (max.):	18.5 dB
Output power (max.):	1.4 dBm
Noise figure (min.):	1.6 dB
Package:	SOT-363
Mounting:	SMD

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Si RFIC amplifier, SOT-363

Order code:	INA-34063
	Si RFIC amplifier, SOT-363 Agilent Technologies INA-34063-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	0 Hz
Max. frequency:	3 GHz
Operating voltage:	3 V
Operating current:	30 mA
Gain (max.):	21.4 dB
Output power (max.):	8.2 dBm
Noise figure (min.):	4.5 dB
Package:	SOT-363
Mounting:	SMD

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Common anode pair Schottky diode, 20V, 35mA, 1.2pF, SOT-23

Order code:	HSMS-2813
	Common anode pair Schottky diode, 20V, 35mA, 1.2pF, SOT-23 Agilent Technologies HSMS-2813
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	20 V
Forward voltage (VF typ., IF = 1 mA) :	360 mV
Forward current (IF):	35 mA
Capacitance (CJ):	1.2 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	common anode pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Si MMIC amplifier, SOT-363

Order code:	INA-12063
	Si MMIC amplifier, SOT-363 Agilent Technologies INA-12063
Conditions:	N- (The product is brand new but it comes from an old production)
Min. frequency:	100 MHz
Max. frequency:	3 GHz
Operating voltage:	5 V
Operating current:	10 mA
Gain (max.):	16 dB
Output power (max.):	0 dBm
Noise figure (min.):	2 dB
Package:	SOT-363
Mounting:	SMD

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Bipolar NPN RF transistor, HPAC-100B package

Order code:	HXTR-3102
	Bipolar NPN RF transistor, HPAC-100B package Agilent Technologies HXTR-3102
Conditions:	N (The product is brand new)
Polarity:	NPN
Collector-emitter voltage (Vce max):	25 V
Transition frequency (fT):	6 GHz
Collector current (Ic max):	100 mA
Dissipated power (Ptot):	700 mW
Mounting:	surface
Package:	HPAC-100B
Package type :	ceramic

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Schottky diode, 20V, 35mA, 1.2pF, SOT-23

Order code:	HSMS-2810
	Schottky diode, 20V, 35mA, 1.2pF, SOT-23 Agilent Technologies HSMS-2810
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	20 V
Forward voltage (VF typ., IF = 1 mA) :	360 mV
Forward current (IF):	35 mA
Capacitance (CJ):	1.2 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	single
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Generla purpose low noise GaAs-FET

Order code:	ATF-21186
	Generla purpose low noise GaAs-FET Agilent Technologies ATF-21186-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	120 mA
Associated gain (Ga):	12.6 dB
Power dissipation:	400 mW
Max. frequency:	6 GHz
Package:	85 mil plastic
Mounting:	SMD

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Low noise E-pHEMT

Order code:	ATF-54143
	Low noise E-pHEMT Agilent Technologies ATF-54143-TR1G
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	E-pHEMT
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-5 V
Drain current (Id):	120 mA
Associated gain (Ga):	16.6 dB
Power dissipation:	360 mW
Max. frequency:	6 GHz
Package:	SOT-343
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13736
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13736-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Low noise and high dynamic GaAs-FET

Order code:	ATF-13336
	Low noise and high dynamic GaAs-FET Agilent Technologies ATF-13336
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	50 mA
Associated gain (Ga):	9 dB
Power dissipation:	225 mW
Max. frequency:	16 GHz
Package:	micro-X
Mounting:	SMD

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Silicon bipolar NPN RF transistor, 86 plastic package

Order code:	AT-42086
	Silicon bipolar NPN RF transistor, 86 plastic package Agilent Technologies AT-42086-TR1
Polarity:	NPN
Collector-emitter voltage (Vce max):	12 V
Transition frequency (fT):	8 GHz
Collector current (Ic max):	80 mA
Dissipated power (Ptot):	500 mW
Mounting:	surface
Package:	86
Package type :	plastic

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Low noise GaAs-FET

Order code:	ATF-10136
	Low noise GaAs-FET Agilent Technologies ATF-10136-TR1
Conditions:	N- (The product is brand new but it comes from an old production)
Type:	GaAs-FET
Drain-source voltage (Vds):	5 V
Gate-source voltage (Vgs) :	-4 V
Drain current (Id):	130 mA
Associated gain (Ga):	13 dB
Power dissipation:	430 mW
Max. frequency:	6 GHz
Package:	micro-X
Mounting:	SMD

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Silicon bipolar NPN RF transistor, SOT-343

Order code:	HBFP-0420
	Silicon bipolar NPN RF transistor, SOT-343 Agilent Technologies HBFP-0420
Conditions:	N (The product is brand new)
Polarity:	NPN
Collector-emitter voltage (Vce max):	4.5 V
Transition frequency (fT):	25 GHz
Collector current (Ic max):	36 mA
Dissipated power (Ptot):	162 mW
Mounting:	surface
Package:	SOT-343
Package type :	plastic

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0.8 - 2.5 GHz upconverter/amplifier, SSOP-16 SMD package

Order code:	HPMX-2006
	0.8 - 2.5 GHz upconverter/amplifier, SSOP-16 SMD package Agilent Technologies HPMX-2006
Conditions:	N- (The product is brand new but it comes from an old production)

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Common anode pair Schottky diode, 70V, 15mA, 2pF, SOT-23

Order code:	HSMS-2803
	Common anode pair Schottky diode, 70V, 15mA, 2pF, SOT-23 Agilent Technologies HSMS-2803
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	70 V
Forward voltage (VF typ., IF = 1 mA) :	330 mV
Forward current (IF):	15 mA
Capacitance (CJ):	2 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	common anode pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

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Silicon bipolar NPN RF transistor, 86 plastic package

Order code:	AT-41486
	Silicon bipolar NPN RF transistor, 86 plastic package Agilent Technologies AT-41486
Conditions:	N (The product is brand new)
Polarity:	NPN
Collector-emitter voltage (Vce max):	12 V
Transition frequency (fT):	8 GHz
Collector current (Ic max):	60 mA
Dissipated power (Ptot):	500 mW
Mounting:	surface
Package:	86
Package type :	plastic

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Dual anode PIN diode

Order code:	HSMP-4890
	Dual anode PIN diode Agilent Technologies HSMP-4890
Conditions:	N (The product is brand new)
Application:	limiter
Reverse voltage (VR):	100 V
Forward current (IF) :	1 A
Max. Capacitance (CT):	0.375 pF
Series resistance (Rs @ IF) :	2.5 Ohm @ 5 mA
Package:	SOT-23
Mounting:	SMD
Configuration:	dual anode
Junction temp. (Tj) (°C):	150

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Common cathode pair PIN diode

Order code:	HSMP-3894
	Common cathode pair PIN diode Agilent Technologies HSMP-3894
Conditions:	N (The product is brand new)
Application:	low distortion switch
Reverse voltage (VR):	100 V
Forward current (IF) :	1 A
Max. Capacitance (CT):	0.3 pF
Series resistance (Rs @ IF) :	2.5 Ohm @ 5 mA
Carrier lifetime:	200 ns
Package:	SOT-23
Mounting:	SMD
Configuration:	common cathode pair
Junction temp. (Tj) (°C):	150

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Series pair PIN diode

Order code:	HSMP-3812
	Series pair PIN diode Agilent Technologies HSMP-3812
Conditions:	N (The product is brand new)
Application:	AGC, low distortion switch, RF attenuator
Reverse voltage (VR):	100 V
Forward current (IF) :	1 A
Max. Capacitance (CT):	0.35 pF
Series resistance (Rs @ IF) :	3 Ohm @ 100 mA
Carrier lifetime:	1.5 µs
Package:	SOT-23
Mounting:	SMD
Configuration:	series pair
Junction temp. (Tj) (°C):	150

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Unconnected trio PIN diode

Order code:	HSMP-386L
	Unconnected trio PIN diode Agilent Technologies HSMP-386L
Conditions:	N (The product is brand new)
Application:	low distortion switch, RF attenuator
Reverse voltage (VR):	50 V
Forward current (IF) :	1 A
Max. Capacitance (CT):	0.2 pF
Series resistance (Rs @ IF) :	1.5 Ohm @ 100 mA
Package:	SOT-363
Mounting:	SMD
Configuration:	unconnected trio
Junction temp. (Tj) (°C):	150

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Pair in series Schottky diode, 20V, 35mA, 1.2pF, SOT-23

Order code:	HSMS-2812
	Pair in series Schottky diode, 20V, 35mA, 1.2pF, SOT-23 Agilent Technologies HSMS-2812
Conditions:	N- (The product is brand new but it comes from an old production)
Breakdown voltage (VBR):	20 V
Forward voltage (VF typ., IF = 1 mA) :	360 mV
Forward current (IF):	35 mA
Capacitance (CJ):	1.2 pF
Package:	SOT-23
Mounting:	SMD
Configuration:	series pair
Junction temp. (Tj) (°C):	150
Low Barrier / Zero Bias:	No

Go to product page HSMS-2812