N-channel enhancement-mode RF power MOSFET, 28V, 45W, 4.5A

• Polarity:
  N-channel
• Output power:
  45 W
• Dissipated power (Ptot):
  115 W
• Drain current (Id max):
  4.5 A
• Drain-source voltage (Vds max):
  65 V
• Supply voltage:
  28 V
• Mounting or package:
  flange
• Mode of operation:
  class-A
• Frequency bands:
  VHF

N-channel enhancement-mode RF power MOSFET, 28V, 45W, 4.5A

N-channel enhancement-mode RF power MOSFET

SPECIFICATIONS:

• Input voltage: 28V
• Gate-Source voltage: ±40V
• Drain-Source voltage: 65V
• Drain-Gate voltage: 65V
• Drain current: 4.5A
• Output power: 45W
• Total power dissipation: 115W
• Noise figure: 1.5dB @ 150 MHz, 28V, 1A
• Power gain: 15dB @ 150 MHz, 28V, 25mA, P_out 45W

High gain HF/VHF MOSFET, 2 - 200MHz wide band

- 50/80W output with 1W input at 28V voltage supply in HF
- 20/25W output with 1.5W input at 13.5V voltage supply in HF
- 50/70W output with 3W input at 28V voltage supply in VHF
- 16/22W output with 2.5W input at 13.5V voltage supply in VHF