N-channel enhancement-mode RF power MOSFET, 28V, 15W, 2.5A

• Polarity:
  N-channel
• Output power:
  15 W
• Dissipated power (Ptot):
  65 W
• Drain current (Id max):
  2.5 A
• Drain-source voltage (Vds max):
  55 V
• Supply voltage:
  28 V
• Mounting or package:
  flange
• Mode of operation:
  class-A
• Frequency bands:
  UHF
  VHF

N-channel enhancement-mode RF power MOSFET, 28V, 15W, 2.5A

N-channel enhancement-mode RF power MOSFET

SPECIFICATIONS:

• Input voltage: 28V
• Gate-Source voltage: ±40V
• Drain-Source voltage: 65V
• Drain-Gate voltage: 65V
• Drain current: 2.5A
• Output power: 15W
• Total power dissipation: 55W
• Power gain: 16dB @ 150 MHz, 28V, 25mA, P_out 15W

High gain HF/VHF MOSFET, 2 - 400MHz wide band

- 20W output with 0.6W input at 28V voltage supply in HF
- 9W output with 0.6W input at 13.5V voltage supply in HF
- 20W output with 1W input at 28V voltage supply in VHF
- 16W output with 6W input at 28V voltage supply at 400 MHz