N-channel enhancement-mode RF power FET, HF/VHF amplifier, 6-24V, 5W, 1A

• Polarity:
  N-channel
• Output power:
  5 W
• Dissipated power (Ptot):
  20 W
• Drain current (Id max):
  1 A
• Drain-source voltage (Vds max):
  45 V
• Supply voltage:
  12.5 V
• Mounting or package:
  flange
• Mode of operation:
  class-A
• Frequency bands:
  HF
  VHF

N-channel enhancement-mode RF power FET, HF/VHF amplifier, 6-24V, 5W, 1A

N-channel enhancement-mode RF power FET, HF/VHF amplifier

SPECIFICATIONS:

• Input voltage: 6-24V
• Gate-Source voltage: 15V
• Drain-Source voltage: 45V
• Drain-Gate voltage: 45V
• Drain current: 1A
• Small signal noise figure: 7dB @ 175 MHz, V_DS 12.5V, I_D 0.5A
• Power gain: 10dB @ 175 MHz
• Total power dissipation: 20W
• Power output: 5W

>10dBG @ 30 MHz, 12V, P_OUT 6W
10dBG @ 175 MHz, 12V, P_OUT 5W

High linearity FET VMOS, due to its low noise it is also used in receivers as high dynamic front-end for HF and VHF bands

CLASS A:

• Frequency Bands: 3 - 175 MHz
• Class A output level: 1W