N-channel enhancement-mode RF power FET, HF/VHF amplifier
SPECIFICATIONS:
>10dBG @ 30 MHz, 12V, POUT 6W
10dBG @ 175 MHz, 12V, POUT 5W
High linearity FET VMOS, due to its low noise it is also used in receivers as high dynamic front-end for HF and VHF bands
CLASS A: