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6 GHz low noise and 16 GHz high dynamic GaAs FET, IDSS 50-90mA with 17.5 dBm power output, FT 40 GHz, micro-X ceramic package
- 0.3 dBNF 17 dBG @ 2 GHz- 0.5 dBNF 15 dBG @ 4 GHz- 0.8 dBNF 13 dBG @ 6 GHz
(Note: equivalent of ATF-13336 model)