Power HJFET

• Type:
  HJFET
• Drain-source voltage (V_ds):
  8 V
• Gate-source voltage (V_gs):
  -3 V
• Drain current (I_d):
  710 mA
• Gain:
  10.5 dB
• Output power:
  32.5 dBm
• Power dissipation:
  5.7 W
• Max. frequency:
  26 GHz
• Internally matched:
  No
• Package:
  100 mil
• Mounting:
  flange

Power HJFET

Power HJFET for applications even over 18 GHz, I_DSS 720mA with V_DS 3V, typical output power +32.5dBm, 100 mil metal package with flange, characterized up to 26 GHz

- 10.5 dBG 11.5 dBLIN +32.5 dBm @12 GHz
- 7.5 dBG 8.5 dBLIN +32.5 dBm @ 18 GHz