Low noise high dynamic GaAs-FET, IDSS 25-80mA, suitable as second RX stage or as low power TX driver, characterized up to 26 GHz, 70 mil ceramic package
- 0.7 dBNF +19 dBm 12 dBG @ 6 GHz
- 1.1 dBNF +18.5 dBm 11.5 dBG @ 12 GHz
- +18.5 dBm 9 dBG @ 18 GHz