17.5 nH 6.5 x 3.2 mm ultra-high Q SMD inductor, SRF > 2.5 GHz typical 4 GHz, Q > 90 at 100-600MHz, 0.005Ω, 4A, very good for BIAS-T from 800 MHz to 3.5 GHz for high power stages
17.5 nH 6.5 x 3.2 mm ultra-high Q SMD inductor, SRF > 2.5 GHz typical 4 GHz, Q > 90 at 100-600MHz, 0.005Ω, 4A, very good for BIAS-T from 800 MHz to 3.5 GHz for high power stages
17.5 nH 6.5 x 3.2 mm ultra-high Q SMD inductor, very good for BIAS-T from 800 MHz to 3.5 GHz for high power stages
- Q: >100 at 300MHz, > 90 at 100-600MHz
- SRF: >2.5 GHz typical 4 GHz
- Resistance: 0.005Ω
- Current: 4A, max 6A
The diagram shows the behaviour of the inductance connected in parallel to a 50Ω strip line it demonstrates that the 4.5 GHz SRF is much more higher than that stated by the manufacturer.
Moreover the diagram highlights the insertion loss and decoupling curves so the frequency bandwidth of 0.8 - 3.5 GHz is fully supported.
SCHEME OF CONSTRUCTION OF A BIAS TEE IN THE BAND OF 0.8 - 4 GHz
The bias tee is a circuit suitable to carry power to a device, for example a RF preamplifier, in a position distant from the power source, the most important characteristics of a bias tee are the insertion loss which must be as low as possible and a bandwidth appropriate for the application. With this coil it is possible to build a very good 0.8 - 4 GHz bias tee, here an example to ease the construction.
TYPICAL SPECIFICATIONS
- Current: 4A, max 6A
- Frequency bandwidth: 0.8 - 4 GHz
- Insertion loss: 0.2dB (RF connections)
- Retun loss: >20dB
- Isolation: >20dB (dc and RF connections)
- Max voltage: depending on the used capacitors
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