Low noise E-pHEMT

• Type:
  E-pHEMT
• Drain-source voltage (V_ds):
  5 V
• Gate-source voltage (V_gs):
  -5 V
• Drain current (I_d):
  120 mA
• Associated gain (G_a):
  16.6 dB
• Power dissipation:
  360 mW
• Max. frequency:
  6 GHz
• Package:
  SOT-343
• Mounting:
  SMD

Low noise E-pHEMT

This last generation E-pHEMT (no need of negative bias), it is designed for high dynamic and very low noise with high current I_DS max. 120 mA, it is suitable as VHF - UHF front-end receivers up to 6 GHz, high IP3 +36 dBm with Ids 60mA, SOT-343 plastic package

- 0.22 dBNF 25 dBG @ 150 MHz
- 0.22 dBNF 24 dBG @ 500 MHz
- 0.25 dBNF 22 dBG @ 1 GHz
- 0.6 dBNF 15 dBG @ 3 GHz

It is available also the ATF-55143 model with same noise figure and gain values but with lower I_ds