Generla purpose low noise GaAs-FET

• Type:
  GaAs-FET
• Drain-source voltage (V_ds):
  5 V
• Gate-source voltage (V_gs):
  -4 V
• Drain current (I_d):
  120 mA
• Associated gain (G_a):
  12.6 dB
• Power dissipation:
  400 mW
• Max. frequency:
  6 GHz
• Package:
  85 mil plastic
• Mounting:
  SMD

Generla purpose low noise GaAs-FET

High dynamic low NF VHF-UHF GaAs FET amplifier up to 6 GHz, I_DSS 80-200mA, 85 mil plastic package

With 70mA I_DSS it has low NF:
- 0.4 dBNF 19 dBG @ 500 MHz
- 0.5 dBNF 14dBG @ 2.5 GHz

It is interesting that with this NF values the power output is +19dBm, this device is suggested for 3 - 4 GHz applications or low noise general purpose up to 6 GHz