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cod. RD15HVF1 - MITSUBISHI RD15HVF1

MITSUBISHI RD15HVF1
Image is for illustrative purposes, see product details
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Minimum:1 pc
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1+ pc 4,90
10+ pc 4,55
In stock: 62 pc
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Details
Category: Transistors - power FET and MOSFET
Order code: RD15HVF1
Manufacturer: MITSUBISHI
Model p/n: RD15HVF1
RoHS: Yes
Conditions: New
Unit weight: 1.00 g
Downloads
datasheet (530 KB)PRINTABLE VERSION

RF silicon MOSFET power transistor, 12.5V, 18W, 4A, TO-220 package

  • Specifications
  • Description
Output power:18 W
Dissipated power (Ptot):48 W
Drain current (Id max):4 A
Drain-source voltage (Vds max):30 V
Supply voltage:12.5 V
Mounting or package:TO-220
Frequency bands:VHF, UHF

RF silicon MOSFET power transistor

SPECIFICATIONS:

  • Drain to source voltage (VDSS): 30V
  • Supply voltage: 12.5V
  • Drain current (ID): 4A
  • Frequency band: HF - VHF - UHF
  • Output Power: 18W (typ.)
    • 175 MHz 18W, Pin 0.6W
    • 520 MHz 18W, Pin 3W
  • Channel dissipation (Pch): 48W
  • Package: TO-220

This transistor is used in many transceivers like Icom IC756 PROIII, IC7410, IC7600, IC9100 and others



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