RF power LD MOSFET, 26V, 12W

RF power LD MOSFET, 26V, 12W

RF power LD MOSFET, 26V, 12W

SPECIFICATIONS:

• Input voltage: 26V
• Gate-Source voltage: ±20V
• Drain-Source voltage: 65V
• Output power: 12W
• Total device dissipation: 58W
• Power gain: 10dB @ 1930 MHz, 26V, 155mA, P_out 3W

This power FET is available for use in the 400 MHz - 2.4 GHz band at a very affordable price. Due to the remarkable development of 1.9 GHz band base stations for cellular and other wireless infrastructure, now are available devices with a professional ceramic case at costs so far unthinkable. This FET for medium power applications up to 2.4 GHz is currently the best compromise between cost and quality. Of course you can also use them starting form 100 MHz but we believe more convenient an usage over 400 MHz, in fact the device is not pre-matched and so it can work very well on broadband circuits.

WARNING: due to the high gain and low frequencies we suggest (like for all wide band devices) to limit gain for lower frequencies. In fact the circuit below is not the best obtainable in performances for PTF10041 at 1.3 GHz but it is very stable because it has not self-oscillations and it gives a weaker amplification at lower frequencies.

PTF10041 test at 1.3 GHz
It is preferable to get the bias circuit from a common voltage stabilizer, the bias voltage on the gate is about +4.5/+5V
	C1 = 6p8 C2 = 5p6 C3 = 2p7 C4 = 2p7 C5 = 3p3 C6 + C7 = by-pass ceramic C8 = by-pass tantalum R1 = 470Ω 0805 R2 = 470Ω 0805 R3 = 8.2KΩ 0805 R4 = 10 kΩ L1 = 2 t Ø 5 mm CuAg Ø 0.5 – 0.6 mm L2 + L3 = RF choke Z1 + Z2 see PCB PCB = FR4 0,8 mm thickness
VCC = 12.6V
Bias 150 mA : 2.8 W @ 0.6 A 10.5 dBGlin --- Bias 300 mA : 3.4 W @ 0.7 A 12.8 dBGlin Bias 500 mA : 4 W @ 0.8 A 13.5 dBGlin --- V bias ~ + 5V --- B-1dB = ~ 100 MHz

• Output power:
  12 W
• Dissipated power (Ptot):
  58 W
• Drain-source voltage (Vds max):
  64 V
• Supply voltage:
  26 V
• Mounting or package:
  SMD
• Frequency bands:
  UHF