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cod. MRF275G - Motorola MRF275G

Motorola MRF275G
Image is for illustrative purposes, see product details
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Minimum:1 pc
Multiple:1 pc
Q.ty Price
1+ pc 59,00
4+ pc 53,00
10+ pc 49,00
In stock: 2 pc
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Details
Category: Transistors - power FET and MOSFET
Order code: MRF275G
Manufacturer: Motorola
Model p/n: MRF275G
Conditions: New
Unit weight: 11.00 g
Downloads
datasheet (229 KB)PRINTABLE VERSION

N-channel enhancement-mode RF push-pull power FET, 28V, 150W, 26A

  • Specifications
  • Description
Channel:N
Output power:150 W
Dissipated power (Ptot):400 W
Drain current (Id max):26 A
Drain-source voltage (Vds max):65 V
Supply voltage:28 V
Mounting or package:flange
Frequency bands:UHF, VHF

N-channel enhancement-mode RF power FET

SPECIFICATIONS:

  • Input voltage: 28V
  • Gate-Source voltage: ±40V
  • Drain-Gate voltage: 65V
  • Drain current: 26A
  • Total power dissipation: 400W
  • Power output: 150W 12dBG @ 400 MHz (input 10W)
  • Power output: 130W 13dBG @ 400 MHz (input 6W)
  • Power output: 150W 11.2dBG @ 500 MHz

Double push-pull FET suitable also for wide band, 100 - 500 MHz, applications, similar to Philips BLF548



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