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cod. DV1210S - MA-COM PHI Inc. DV1210S

MA-COM PHI Inc. DV1210S
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Details
Category: Transistors - power FET and MOSFET
Order code: DV1210S
Manufacturer: MA-COM PHI Inc.
Model p/n: DV1210S
Conditions: New
Unit weight: 6.00 g
Downloads
datasheet (125 KB)PRINTABLE VERSION

N-channel enhancement-mode RF power FET, HF/VHF amplifier, 10-20V, 10W, 2A

  • Specifications
  • Description
Channel:N
Output power:10 W
Dissipated power (Ptot):40 W
Drain current (Id max):2 A
Drain-source voltage (Vds max):20 V
Supply voltage:45 V
Mounting or package:flange
Mode of operation:class-A
Frequency bands:VHF

N-channel enhancement-mode RF power FET, HF/VHF amplifier

SPECIFICATIONS:

  • Input voltage: 10-20V
  • Gate-Source voltage: 30V
  • Drain-Source voltage: 45V
  • Drain-Gate voltage: 45V
  • Drain current: 2A
  • Power gain: 10dB @ 175 MHz
  • Total power dissipation: 40W
  • Power output: 10W

>10dBG @ 30 MHz, 12V, POUT 15W

High linearity FET VMOS, due to its low noise it is also used in receivers as high dynamic front-end for HF and VHF bands

CLASS A:

  • Frequency Bands: 3 - 175 MHz
  • Class A output level: 2W


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