Internally matched power GaAs-FET

Internally matched power GaAs-FET

• Type:
  GaAs-FET
• Drain-source voltage (V_ds):
  10 V
• Gate-source voltage (V_gs) :
  -15 V
• Drain current (I_d):
  2.8 A
• Gain:
  7 dB
• Output power:
  35.5 dBm
• Power dissipation:
  27.2 W
• Min. frequency:
  12.7 GHz
• Max. frequency :
  13.2 GHz
• Internally matched:
  Yes
• Package:
  metal-ceramic hermetic
• Mounting :
  flange